參數(shù)資料
型號(hào)： LH28F400SUN
廠商： Sharp Corporation
英文描述： 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
中文描述： 的4Mb（512Kbit x 8256千位× 16）3.3閃存
文件頁(yè)數(shù)： 4/35頁(yè)
文件大?。?/td> 294K
代理商： LH28F400SUN
LH28F400SU-NC
4M (512K × 8, 256K × 16) Flash Memory
4
PIN DESCRIPTION
SYMBOL
TYPE
NAME AND FUNCTION
DQ
15
- A
-1
INPUT
BYTE-SELECT ADDRESSES:
Selects between high and low byte when device is in
x8 mode. This address is latched in x8 Data Writes. Not used in x16 mode (i.e., the
DQ
15
/A
-1
input buffer is turned off when BYTE is high).
A
0
- A
12
INPUT
WORD-SELECT ADDRESSES:
Select a word within one 16K block. These
addresses are latched during Data Writes.
A
13
- A
17
INPUT
BLOCK-SELECT ADDRESSES:
Select 1 of 32 Erase blocks. These addresses are
latched during Data Writes, Erase and Lock-Block operations.
DQ
0
- DQ
7
INPUT/OUTPUT
LOW-BYTE DATA BUS:
Inputs data and commands during CUI write cycles.
Outputs array, buffer, identifier or status data in the appropriate Read mode.
Floated when the chip is de-selected or the outputs are disabled.
DQ
8
- DQ
15
INPUT/OUTPUT
HIGH-BYTE DATA BUS:
Inputs data during x16 Data Write operations. Outputs
array, buffer or identifier data in the appropriate Read mode; not used for Status
register reads. Floated when the chip is de-selected or the outputs are disabled.
DQ
15
/A
-1
is address.
CE
INPUT
CHIP ENABLE INPUT:
Activate the device’s control logic, input buffers, decoders
and sense amplifiers. CE
must be low to select the device.
RP
INPUT
RESET/POWER-DOWN:
With RP
low, the device is reset, any current operation is
aborted and device is put into the deep power down mode. When the power is
turned on, RP
pin is turned to low in order to return the device to default con-
figuration. When the power transition is occurred, or the power on/off, RP
is
required to stay low in order to protect data from noise. When returning from Deep
Power-Down, a recovery time of 430 ns is required to allow these circuits to power
up. When RP
goes low, any current or pending WSM operation(s) are terminated,
and the device is reset. All Status registers return to ready (with all status flags
cleared). After returning, the device is in read array mode.
OE
INPUT
OUTPUT ENABLE:
Gates device data through the output buffers when low. The
outputs float to tri-state off when OE
is high.
WE
INPUT
WRITE ENABLE:
Controls access to the CUI, Data Queue Registers and Address
Queue Latches. WE is active low, and latches both address and data (command or
array) on its rising edge.
RY
/BY
OPEN DRAIN
OUTPUT
READY/BUSY:
Indicates status of the internal WSM. When low, it indicates that the
WSM is busy performing an operation. When the WSM is ready for new operation or
Erase is Suspended, or the device is in deep power-down mode RY
/BY
pin is floated.
BYTE
INPUT
BYTE ENABLE
: BYTE low places device in x8 mode. All data is then input or
output on DQ
0
- DQ
7
, and DQ
8
- DQ
15
float. Address A
-1
selects between the high
and low byte. BYTE high places the device in x16 mode, and turns off the A
-1
input buffer. Address A
0
, then becomes the lowest order address.
V
PP
SUPPLY
ERASE/WRITE POWER SUPPLY (5.0 V ±0.5 V):
For erasing memory array blocks
or writing words/bytes into the flash array.
V
CC
SUPPLY
DEVICE POWER SUPPLY (3.3 V ±0.3 V):
Do not leave any power pins floating.
GND
SUPPLY
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NC
NO CONNECT:
No internal connection to die, lead may be driven or left floating.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F400SU-NC 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUN-LC12 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
LH28F400SUN-LC15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F400SUN-NC60 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUN-NC80 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
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