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參數(shù)資料
| 型號： | LH28F400SUB |
| 廠商： | Sharp Corporation |
| 英文描述： | 4M (512K 】 8, 256K 】 16) Flash Memory |
| 中文描述： | 4分（為512k】8，256K】16）快閃記憶體 |
| 文件頁數(shù)： | 6/35頁 |
| 文件大?。?/td> | 294K |
| 代理商： | LH28F400SUB |
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LH28F400SU-NC
4M (512K × 8, 256K × 16) Flash Memory
6
Figure 5. Memory Map
MEMORY MAP
The LH28F400SU-NC contains a Compatible
Status Register (CSR) which is 100% compatible with
the LH28F008SA Flash memory’s Status Register. This
register, when used alone, provides a straightforward
upgrade capability to the LH28F004SUT-NC from a
LH28F008SA-based design.
The LH28F400SU-NC incorporates an open drain
RY
/BY
output pin. This feature allows the user to OR-
tie many RY
/BY
pins together in a multiple memory con-
figuration such as a Resident Flash Array.
The LH28F400SU-NC is specified for a maximum
access time of 60 ns (t
ACC
) at 5 V operation (4.75 to
5.25 V), and 70 ns (t
ACC
) at 5 V operation (4.5 to 5.5 V)
over the commercial temperature range (0 to +70°C).
The LH28F400SU-NC incorporates an Automatic
Power Saving (APS) feature which substantially reduces
the active current when the device is in static mode of
operation (addresses not switching).
In APS mode, the typical I
CC
Current is 2 mA at 5 V.
A Deep Power-Down mode of operation is invoked
when the RP
(called PWD on the LH28F008SA) pin
transitions low, any current operation is aborted and the
device is put into the deep power down mode. This mode
brings the device power consumption to less than 5 μA
and provides additional write protection by acting as a
device reset pin during power transitions. When the
power is turned on, RP
pin is turned to low in order to
return the device to default configuration. When the
power transition is occured, or at the power on/off RP
pin is required to stay low in order to protect data from
noise. A recovery time of 480 ns is required from RP
switching high until outputs are again valid. In the Deep
Power-Down State, the WSM is reset (any current
operation will abort) and the CSR register is cleared.
A CMOS Standby mode of operation is enabled when
CE
transitions high and RP
stays high with all input
control pins at CMOS levels. In this mode, the device
draws an I
CC
standby current of 10 μA.
15
7C000H
7BFFFH
78000H
77FFFH
74000H
73FFFH
70000H
6FFFFH
6C000H
6BFFFH
68000H
67FFFH
64000H
63FFFH
60000H
5FFFFH
5C000H
5BFFFH
58000H
57FFFH
54000H
53FFFH
50000H
4FFFFH
4C000H
4BFFFH
48000H
47FFFH
44000H
43FFFH
40000H
3FFFFH
3C000H
3BFFFH
38000H
37FFFH
34000H
33FFFH
30000H
2FFFFH
2C000H
2BFFFH
28000H
27FFFH
24000H
23FFFH
20000H
1FFFFH
1C000H
1BFFFH
18000H
17FFFH
14000H
13FFFH
10000H
0FFFFH
0C000H
0BFFFH
08000H
07FFFH
04000H
03FFFH
7FFFFH
00000H
14
13
12
11
10
9
8
7
6
5
4
3
2
0
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1
16KB BLOCK
16KB BLOCK
28F400SUT-NC60-3
NOTE:
In Byte-wide (x8) mode A
1
is the lowest order address.
In Word-wide (x16) mode A
1
don't care, address values
are ignored A
1
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F400SUN | 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory |
| LH28F400BG-L12 | 4M-BIT(256KBx16) SmartVoltage Flash MEMORY |
| LH28F400BG-L85 | 4M-BIT(256KBx16) SmartVoltage Flash MEMORY |
| LH28F400SU-LC | 4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN-LC12 | 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F400SUB-Z0 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUE-LC15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| LH28F400SUE-NC60 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUE-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUHE-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory |
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