參數(shù)資料
型號(hào)： LH28F400SUB
廠商： Sharp Corporation
英文描述： 4M (512K 】 8, 256K 】 16) Flash Memory
中文描述： 4分（為512k】8，256K】16）快閃記憶體
文件頁(yè)數(shù)： 13/35頁(yè)
文件大?。?/td> 294K
代理商： LH28F400SUB
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
13
Figure 9. Block Locking Scheme
START
BUS
OPERATION
COMMAND
COMMENTS
CSR.7 =
0
1
OPERATION COMPLETE
Read
Read
Read
Write
Reset
Write Protect
Q = CSRD
Toggle CE or OE
to update CSRD.
1 = WSM Ready
0 = WSM Busy
D = D0H
A = BA
Q = CSRD
Toggle CE or OE
to update CSRD.
1 = WSM Ready
0 = WSM Busy
Q = CSRD
Toggle CE or OE
to update CSRD.
1 = WSM Ready
0 = WSM Busy
NOTE:
See CSR Full Status Check for Data-Write operation.
If CSR.4, 5 is set, as it is command sequence error,
should be cleared before further attempts are initiated.
Write FFH after the last operation to reset device to read
array mode.
See Command Bus Definitions for description of codes.
After Write D = 47H A = X,
Write D = D0H A = 0FFH
Write
Lock Block
Confirm
Set
Write Protect
D = 77H
A = X
After Write D = 57H A = X,
Write D = D0H A = 0FFH
Write
Write
28F400SUT-NC60-7
READ COMPATIBLE
STATUS REGISTER
RESET WP
READ COMPATIBLE
STATUS REGISTER
WRITE D0H AND
BLOCK ADDRESS
READ COMPATIBLE
STATUS REGISTER
CSR.7 =
CSR.7 =
CSR.4, 5 =
0
1
1
0
1
0
LOCK
ANOTHER
BLOCK
NO
YES
(NOTE)
WRITE 77H
SET WP
相關(guān)PDF資料
PDF描述
LH28F400SUN 4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F400SUB-Z0 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUE-LC15 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F400SUE-NC60 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUE-NC80 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUHE-NC80 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory
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