參數(shù)資料
型號(hào)： LH28F320BFHE-PBTL60
廠商： Sharp Corporation
英文描述： 32M (x16) Flash Memory
中文描述： 32M的（x16）的快閃記憶體
文件頁(yè)數(shù)： 22/37頁(yè)
文件大小： 693K
代理商： LH28F320BFHE-PBTL60
LHF32FB4 20
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
CC
=3.0V and T
A
=+25
°
C
unless V
CC
is specified.
2. I
CCWS
and I
CCES
are specified with the device de-selected. If read or (page buffer) program is executed while in block
erase suspend mode, the device
’
s current draw is the sum of I
CCES
and I
CCR
or I
CCW
. If read is executed while in (page
buffer) program suspend mode, the device
’
s current draw is the sum of I
CCWS
and I
CCR
.
3. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
completion. Standard address access timings (t
AVQV
) provide new data when addresses are changed.
4. Sampled, not 100% tested.
5. Applying 12V±0.3V to WP#/ACC provides fast erasing or fast programming mode. In this mode, WP#/ACC is power
supply pin and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power
supply trace widths and layout considerations given to the V
CC
power bus.
Applying 12V±0.3V to WP#/ACC during erase/program can only be done for a maximum of 1,000 cycles on each block.
WP#/ACC may be connected to 12V±0.3V for a total of 80 hours maximum.
6. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.
7. Includes RY/BY#.
V
IL
Input Low Voltage
4
-0.4
0.4
V
V
IH
Input High Voltage
4
2.4
V
CC
+ 0.4
V
V
OL
Output Low Voltage
4,7
0.2
V
V
CC
=V
CC
Min.,
I
OL
=100
μ
A
V
CC
=V
CC
Min.,
I
OH
=-100μA
V
OH
Output High Voltage
4
V
CC
-0.2
V
V
ACCH
WP#/ACC during Block Erase, Full
Chip Erase, (Page Buffer) Program or
OTP Program Operations
V
CC
Lockout Voltage
5
11.7
12
12.3
V
V
LKO
1.5
V
V
CC
=2.7V-3.6V
Symbol
Parameter
Notes
Min.
Typ.
Max.
Unit
Test Conditions
Rev. 2.44
DC Characteristics (Continued)
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