參數(shù)資料
型號(hào)： LH28F016SUT-10
廠商： Sharp Corporation
英文描述： 16M (1M x 16 , 2M x 8) Flash Memory
中文描述： 1,600（100萬(wàn)× 16，200萬(wàn)× 8）閃存
文件頁(yè)數(shù)： 6/37頁(yè)
文件大?。?/td> 326K
代理商： LH28F016SUT-10
LH28F016SU
16M (1M × 16, 2M × 8) Flash Memory
6
OPERATING
TEMPERATURE
V
CC
SUPPLY
MAX. ACCESS
(T
ACC
)
0 - 70°C
4.75 - 5.25 V
70 ns
0 - 70°C
4.5 - 5.5 V
80 ns
0 - 70°C
3.0 - 3.6 V
120 ns
0 - 70°C
2.7 - 3.6 V
160 ns
The LH28F016SU contains three types of Status
Registers to accomplish various functions:
A Compatible Status Register (CSR) which is 100%
compatible with the LH28F008SA Flash memory’s
Status Register. This register, when used alone, pro-
vides a straightforward upgrade capability to the
LH28F016SU from a LH28F008SA based design.
A Global Status Register (GSR) which informs the
system of command Queue status, Page Buffer sta-
tus, and overall Write State Machine (WSM) status.
32 Block Status Registers (BSRs) which provide
block-specific status information such as the block
lock-bit status.
The GSR and BSR memory maps for Byte-Wide and
Word-Wide modes are shown in Figures 5 and 6.
The LH28F016SU incorporates an open drain
RY
/BY
output pin. This feature allows the user to OR-
tie many RY
/BY
pins together in a multiple memory con-
figuration such as a Resident Flash Array.
The LH28F016SU also incorporates a dual chip-
enable function with two input pins, CE
0
and CE
1
. These
pins have exactly the same functionality as the regular
chip-enable pin CE
on the LH28F008SA. For minimum
chip designs, CE
1
may be tied to ground and use CE
0
as the chip enable input. The LH28F016SU uses the
logical combination of these two signals to enable or
disable the entire chip. Both CE
0
and CE
1
must be ac-
tive low to enable the device and if either one becomes
inactive, the chip will be disabled. This feature, along
with the open drain RY
/BY
pin, allows the 0system de-
signer to reduce the number of control pins used in a
large array of 16M devices.
The BY
TE
pin allows either x8 or x16 read/writes to
the LH28F016SU. BY
TE
at logic low selects 8-bit mode
with address A
0
selecting between low byte and high
byte. On the other hand, BY
TE
at logic high enables
16-bit operation with address A
1
becoming the lowest
order address and address A
0
is not used (don’t care).
A block diagram is shown in Figure 3.
The LH28F016SU is specified for a maximum
access time of each version, as follows:
The LH28F016SU incorporates an Automatic Power
Saving (APS) feature which substantially reduces the
active current when the device is in static mode of
operation (addresses not switching).
In APS mode, the typical I
CC
current is 2 mA at 5.0 V
(1 mA at 3.3 V).
A Deep Power-Down mode of operation is invoked
when the RP
(called PWD on the LH28F008SA) pin
transitions low, any current operation is aborted and the
device is put into the deep power-down mode. This mode
brings the device power consumption to less than 5 μA
typically, and provides additional write protection by
acting as a device reset pin during power transitions.
When the power is turned on, RP
pin turned to low or-
der to return the device to default configuration. When
the 3/5
pin is switched, or when the power transition is
occured, or at the power on/off, RP
is required to stay
low in order to protect data from noise. A recovery time
of 550 ns (V
CC
= 5.0 V ± 0.5 V) is required from RP
switching high until outputs are again valid. In the Deep
Power-Down state, the WSM is reset (any current
operation will abort) and the CSR, GSR and BSR regis-
ters are cleared.
A CMOS Standby mode of operation is enabled when
either CE
0
or CE
1
transitions high and RP
stays high
with all input control pins at CMOS levels. In this mode,
the device typically draws an I
CC
standby current of
10 μA.
相關(guān)PDF資料
PDF描述
LH28F016SUT-70 16M (1M x 16 , 2M x 8) Flash Memory
LH28F016SCT-L95 16M Flash Memory 2M (】8)
LH28F016LL 16M (1M 】 16, 2M 】 8) Flash Memory
LH28F016SA 16M (1M 】 16, 2M 】 8) Flash Memory
LH28F016SANS 16 Mbit(1 Mbit x 16, 2 Mbit x 8)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F016SUT-70 制造商:Sharp Microelectronics Corporation 功能描述:
LH28F020SU-L 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:2M (256K 】 8) Flash Memory
LH28F020SU-N 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:2M (256K 】 8) Flash Memory
LH28F020SUN-L12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F032SUTD-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM Module
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