參數(shù)資料
型號: LH28F004SU-LC
廠商: Sharp Corporation
英文描述: 4M (512K 】 8) Flash Memory
中文描述: 4分(為512k】8)閃存
文件頁數(shù): 21/31頁
文件大?。?/td> 249K
代理商: LH28F004SU-LC
4M (512K × 8) Flash Memory
LH28F004SU-LC
21
DC Characteristics (Continued)
V
CC
= 3.3 V ± 0.3 V, T
A
= 0°C to +70°C
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 3.3 V, V
PP
= 5.0 V, T = 25°C. These currents are valid for all
product versions (package and speeds).
2. I
CCES
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
I
CCES
and I
CCR
.
3. Automatic Power Saving (APS) reduces I
CCR
to less than 1 mA in Static operation.
4. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL Inputs are either V
IL
or V
IH
.
5. In 2.7 V < V
CC
< 3.0 V operation. TTL-level input of RP
is V
IL
(MAX.) = 0.6 V.
6. V
PPL
in read is V
CC
- 0.2 V < V
PPL
< 5.5 V or GND < V
PPL
< GND + 0.2 V.
SYMBOL
PARAMETER
TYP.
MIN.
MAX.
UNITS
TEST CONDITIONS
NOTE
I
PPR
V
PP
Read Current
200
μA
V
PP
> V
CC
1
I
PPW
V
PP
Write Current
15
35
mA
V
PP
= V
PPH
, Byte/Two-Byte
Serial Write in Progress
1
I
PPE
V
PP
Erase Current
20
40
mA
V
PP
= V
PPH
,
Block Erase in Progress
1
I
PPES
V
PP
Erase Suspend
Current
200
μA
V
PP
= V
PPH
,
Block Erase Suspended
1
V
IL
Input Low Voltage
-0.3
0.8
V
5
V
IH
Input High Voltage
2.0
V
CC
+ 0.3
V
V
OL
Output Low Voltage
0.4
V
V
CC
= V
CC
MIN. and
I
OL
= 4 mA
V
OH1
Output High Voltage
2.4
V
I
OL
= -2 mA
V
CC
= V
CC
MIN.
V
OH2
V
CC
- 0.2
V
I
OL
= -100 μA
V
CC
= V
CC
MIN.
V
PPL
V
PP
during Normal
Operations
0.0
5.5
V
6
V
PPH
V
PP
during Write/Erase
Operations
5.0
4.5
5.5
V
V
LKO
V
CC
Erase/Write
Lock Voltage
1.4
V
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