參數(shù)資料
型號(hào): LH28F004SU-LC
廠商: Sharp Corporation
英文描述: 4M (512K 】 8) Flash Memory
中文描述: 4分(為512k】8)閃存
文件頁(yè)數(shù): 1/31頁(yè)
文件大?。?/td> 249K
代理商: LH28F004SU-LC
LH28F004SU-LC
1
4M (512K × 8) Flash Memory
Figure 1. TSOP Configuration
FEATURES
512K × 8 Word Configuration
5 V Write/Erase Operation
(5 V V
PP
, 3.3 V V
CC
)
– No Requirement for DC/DC Converter to
Write/Erase
120 ns Maximum Access Time
(V
CC
= 3.3 V ± 0.3 V)
Min. 2.7 V Read Capability
– 160 ns Maximum Access Time
(V
CC
= 2.7 V)
32 Independently Lockable Blocks
100,000 Erase Cycles per Block
Automated Byte Write/Block Erase
– Command User Inferface
– Status Register
– RY
/BY
Status Output
System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Full Chip Erase
Data Protection
– Hardware Erase/Write Lockout during
Power Transitions
– Software Erase/Write Lockout
Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)
4 μA (Typ.) I
CC
in CMOS Standby
0.2 μA (Typ.) Deep Power-Down
State-of-the-Art 0.55 μm ETOX Flash
Technology
Extended Temperature Operation Available
– -40°C to +85°C
40-Pin, 1.2 mm × 10 mm × 20 mm TSOP
(Type I) Package
28F004SUT-LC12-1
TOP VIEW
40-PIN TSOP
2
3
4
5
8
9
A
8
WE
A
12
A
11
37
36
35
34
33
32
29
26
6
7
A
9
A
13
A
16
A
15
A
14
31
30
NC
DQ
6
DQ
5
DQ
4
V
CC
V
CC
NC
10
11
12
39
38
NC
13
28
DQ
3
DQ
2
DQ
1
DQ
0
27
DQ
7
A
10
A
17
GND
14
15
16
17
18
19
20
23
25
24
22
21
OE
GND
CE
A
0
A
3
A
2
A
1
A
4
A
7
A
6
A
5
A
18
40
1
V
PP
RP
RY/BY
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F004SU-NC 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
LH28F004SUT-LC12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F004SUT-LC15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F004SUT-NC80 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
LH28F004SUT-Z1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM