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參數(shù)資料
| 型號： | LH28F004SCB-L12 |
| 廠商： | Sharp Corporation |
| 英文描述： | 4Mbit Flash Memory |
| 中文描述： | 的4Mb閃存 |
| 文件頁數(shù)： | 8/31頁 |
| 文件大?。?/td> | 249K |
| 代理商： | LH28F004SCB-L12 |
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LH28F004SU-LC
4M (512K × 8) Flash Memory
8
WSMS
ESS
ES
DWS
VPPS
R
R
R
7
6
5
4
3
2
1
0
Compatible Status Register
CSR.7 = WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
CSR.6 = ERASE-SUSPEND STATUS (ESS)
1 = Erase Suspended
0 = Erase in Progress/Completed
CSR.5 = ERASE STATUS (ES)
1 = Error in Block Erasure
0 = Successful Block Erase
CSR.4 = DATA-WRITE STATUS (DWS)
1 = Error in Data Write
0 = Data Write Successful
CSR.3 = V
PP
STATUS (VPPS)
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
OK
NOTES:
1. RY
/BY
output or WSMS bit must be checked to determine
completion of an operation (Erase Suspend, Erase or Data
Write) before the appropriate Status bit (ESS, ES or DWS)
is checked for success.
2. If DWS and ES are set to ‘1’ during an erase attempt, an
improper command sequence was entered. Clear the CSR
and attempt the operation again.
3. The VPPS bit, unlike an A/D converter, does not provide
continuous indication of V
PP
level. The WSM interrogates
V
PP
’s level only after the Data-Write or Erase command
sequences have been entered, and informs the system if
V
PP
has not been switched on. VPPS is not guaranteed to
report accurate feedback between V
PPL
and V
PPH
.
4. CSR.2 - CSR.0 = Reserved for future enhancements.
These bits are reserved for future use and should be
masked out when polling the CSR.
4M FLASH MEMORY
SOFTWARE ALGORITHMS
Overview
With the advanced Command User Interface, its
Performance Enhancement commands and Status Reg-
isters, the software code required to perform a given
operation may become more intensive but it will result
in much higher write/erase performance compared with
current flash memory architectures.
The software flowcharts describing how a given
operation proceeds are shown here. Figures 4 through
6 depict flowcharts using the 2nd generation flash
device in the LH28F008SA-compatible mode. Figures
7 through 12 depict flowcharts using the 2nd genera-
tion flash device’s performance enhancement com-
mands mode.
When the device power-up or the device is reset by
RP
pin, all blocks come up locked. Therefore, Word/
Byte Write, Two Byte Serial Write and Block Erase can
not be performed in each block. However, at that time,
Erase All Unlocked Block is performed normally, if used,
and reflect actual lock status, also the unlocked block
data is erased. When the device power-up or the device
is reset by RP
pin, Set Write Protect command must be
written to reflect actual block lock status.
Reset Write Protect command must be written be-
fore Write Block Lock command. To reflect actual block
lock status, Set Write Protect command is succeeded.
The Compatible Status Register (CSR) is used to
determine which blocks are locked. In order to see Lock
Status of a certain block, a Word/Byte Write command
(WA = Block Address, WD = FHH) is written to the CUI,
after issuing Set Write Protect command. If CSR.7,
CSR.5 and CSR.4 (WSMS, ES, and DWS) are set to
‘1’s, the block is locked. If CSR.7 is set to‘1’, the block is
not locked.
Reset Write Protect command enables Write/Erase
operation to each block.
In the case of Block Erase is performed, the block
lock information is also erased. Block Lock command
and Set Write Protect command must be written to pro-
hibit Write/Erase operation to each block.
There are unassigned commands. It is not recom-
mended that the customer use any command other than
the valid commands specified in “Command Bus Defi-
nitions”. Sharp reserved the right to redefine these codes
for future functions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F004SU | 4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory |
| LH28F004SUT-NC80 | 4M (512K 】 8) Flash Memory |
| LH28F008SAR-85 | 8M (1M x8) Flash Memory(8M (1M x8) 閃速存儲器) |
| LH28F008SCR-L85 | 8M (1M x8) Flash Memory(8M (1M x8) 閃速存儲器) |
| LH28F008SCT-L12 | Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F004SCB-L85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHB-L12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHB-L85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHN-L12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHN-L85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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