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參數(shù)資料
| 型號： | LH28F004SCB-L12 |
| 廠商： | Sharp Corporation |
| 英文描述： | 4Mbit Flash Memory |
| 中文描述： | 的4Mb閃存 |
| 文件頁數(shù)： | 18/31頁 |
| 文件大小： | 249K |
| 代理商： | LH28F004SCB-L12 |
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LH28F004SU-LC
4M (512K × 8) Flash Memory
18
NOTE:
1. V
CC
supply range during read is 2.7 to 3.6 V.
*
WARNING: Stressing the device beyond the “Abso-
lute Maximum Ratings” may cause permanent dam-
age. These are stress ratings only. Operation beyond
the “Operating Conditions” is not recommended and
extended exposure beyond the Operating Conditions”
may affect device reliability.
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings*
Temperature under bias ......................... 0°C to +70°C
Storage temperature .........................-65°C to +125°C
V
CC
= 3.3 V ±0.3 V Systems
SYMBOL
PARAMETER
MIN.
MAX.
UNITS
TEST CONDITIONS
NOTE
T
A
Operating Temperature, Commercial
0
70
°C
Ambient Temperature
1
V
CC
V
CC
with Respect to GND
-0.2
7.0
V
2
V
PP
V
PP
Supply Voltage with Respect to GND
-0.2
7.0
V
2
V
Voltage on any Pin (Except V
CC
, V
PP
)
with Respect to GND
-0.5
V
CC
+ 0.5
V
2
I
Current into any Non-Supply Pin
±30
mA
I
OUT
Output Short Circuit Current
100.0
mA
3
NOTES:
1. Operating temperature is for commercial product defined by this specification.
2. Minimum DC voltage is -0.5 V on input/output pins. During transitions, this level may undershoot to -2.0 V for periods < 20 ns.
Maximum DC voltage on input/output pins is V
CC
+ 0.5 V which, during transitions, may overshoot to V
CC
+ 2.0 V for periods < 20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
Capacitance
For 3.3 V Systems
SYMBOL
PARAMETER
TYP.
MAX.
UNITS
TEST CONDITIONS
NOTE
C
IN
Capacitance Looking into an
Address/Control Pin
7
10
pF
T
A
= 25°C, f = 1.0 MHz
1
Capacitance Looking into an
Address/Control Pin A
10
9
12
pF
T
A
= 25°C, f = 1.0 MHz
1
C
OUT
Capacitance Looking into an Output Pin
9
12
pF
T
A
= 25°C, f = 1.0 MHz
1
C
LOAD
Load Capacitance Driven by Outputs for
Timing Specifications
50
pF
For V
CC
= 3.3 V ±0.3 V
1
Equivalent Testing Load Circuit V
CC
± 10%
2.5
ns
25
transmission line delay
NOTE:
1. Sampled, not 100% tested.
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| LH28F004SU | 4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory |
| LH28F004SUT-NC80 | 4M (512K 】 8) Flash Memory |
| LH28F008SAR-85 | 8M (1M x8) Flash Memory(8M (1M x8) 閃速存儲器) |
| LH28F008SCR-L85 | 8M (1M x8) Flash Memory(8M (1M x8) 閃速存儲器) |
| LH28F008SCT-L12 | Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F004SCB-L85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHB-L12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHB-L85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHN-L12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SCHN-L85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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