參數(shù)資料
型號(hào): LH28F004SCB-L12
廠(chǎng)商: Sharp Corporation
英文描述: 4Mbit Flash Memory
中文描述: 的4Mb閃存
文件頁(yè)數(shù): 22/31頁(yè)
文件大小: 249K
代理商: LH28F004SCB-L12
LH28F004SU-LC
4M (512K × 8) Flash Memory
22
AC Characteristics - Read Only Operations
1
V
CC
= 3.3 V ± 0.3 V, T
A
= 0°C to +70°C
SYMBOL
PARAMETER
MIN.
MAX.
UNITS
NOTE
t
AVAV
Read Cycle Time
120
ns
t
AVGL
Address Setup to OE
Going Low
0
ns
3
t
AVQV
Address to Output Delay
120
ns
t
ELQV
CE
to Output Delay
120
ns
2
t
PHQV
RP
High to Output Delay
620
ns
t
GLQV
OE
to Output Delay
45
ns
2
t
ELQX
CE
to Output in Low Z
0
ns
3
t
EHQZ
CE
to Output in High Z
50
ns
3
t
GLQX
OE
to Output in Low Z
0
ns
3
t
GHQZ
OE
to Output in High Z
30
ns
3
t
OH
Output Hold from Address, CE
or
OE
change, whichever occurs first
0
ns
3
AC Characteristics - Read Only Operations
1
(Continued)
V
CC
= 2.85 V ± 0.15 V, T
A
= 0°C to +70°C
SYMBOL
PARAMETER
MIN.
MAX.
UNITS
NOTE
t
AVAV
Read Cycle Time
160
ns
t
AVGL
Address Setup to OE
Going Low
0
ns
3
t
AVQV
Address to Output Delay
160
ns
t
ELQV
CE
to Output Delay
160
ns
2
t
PHQV
RP
High to Output Delay
800
ns
t
GLQV
OE
to Output Delay
55
ns
2
t
ELQX
CE
to Output in Low Z
0
ns
3
t
EHQZ
CE
to Output in High Z
60
ns
3
t
GLQX
OE
to Output in Low Z
0
ns
3
t
GHQZ
OE
to Output in High Z
50
ns
3
t
OH
Output Hold from Address, CE
or
OE
change, whichever occurs first
0
ns
3
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements.
2. OE
may be delayed up to t
ELQV
- t
GLQV
after the failing edge of CE
without impact on t
ELQV
.
3. Sampled, not 100% tested.
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