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參數(shù)資料
| 型號(hào)： | LET9085 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| 中文描述： | RF功率晶體管LDMOS的增強(qiáng)技術(shù) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | LET9085 |
LET9085
2/4
ELECTRICAL SPECIFICATION
(T
CASE
= 25
°
C)
STATIC
(Per Section)
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
*
C
OSS
C
RSS
DYNAMIC
(f = 865 - 895 MHz)
Symbol
DYNAMIC
(f = 920 - 960 MHz)
ESD PROTECTION CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0 V I
D
= 10
μ
A
V
GS
= 0 V V
DS
= 26 V
V
GS
= 0 V
V
GS
= 5 V V
DS
= 0 V
V
DS
= 26 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
65
V
1
μ
A
μ
A
μ
A
V
DS
= 65 V
10
1
I
D
= TBD
I
D
= 2 A
I
D
= 6 A
V
DS
= 28 V
V
DS
= 28 V
V
DS
= 28 V
TBD
V
0.19
0.4
V
8
mho
f = 1 MHz
TBD
pF
f = 1 MHz
75
pF
f = 1 MHz
2.9
pF
Test Conditions
Min.
Typ.
Max.
Unit
P
1dB
V
DD
= 26 V I
DQ
= TBD
90
105
W
η
D
G
P
V
DD
= 26 V I
DQ
= TBD P
OUT
= 90 W
50
55
%
V
DD
= 26 V I
DQ
= TBD P
OUT
= 90 W PEP
V
DD
= 26 V I
DQ
= TBD P
OUT
= 90 W PEP
V
DD
= 26 V I
DQ
= TBD P
OUT
= 90 W
ALL PHASE ANGLES
750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
17
dB
IMD3
-31
-28
dBc
Load
mismatch
10:1
VSWR
P
OUT (CDMA)(1)
20
W
η
D (CDMA)(1)
28
%
P
1dB
V
DD
= 26 V I
DQ
= TBD
70
75
W
G
P
V
DD
= 26 V I
DQ
= TBD P
OUT
= 70 W
15
16
dB
η
D
V
DD
= 26 V I
DQ
= TBD P
OUT
= 70 W
50
55
%
Load
mismatch
V
DD
= 26 V I
DQ
= TBD P
OUT
= 85 W
ALL PHASE ANGLES
400 KHz < -60 dBc
600 KHz < -70 dBc
400 KHz < -60 dBc
600 KHz < -70 dBc
10:1
VSWR
P
OUT(EDGE)
EVM < 3 %
35
W
η
D(EDGE)
EVM < 3 %
35
%
Test Conditions
Class
2
M3
Human Body Model
Machine Model
* Includes Internal Input Moscap.
(1) IS-95 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
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|---|---|
| LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LET9120 | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 120W 18 dB 860MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9130 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET9150 | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 150W 20 dB 860MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9180 | 制造商:STMicroelectronics 功能描述:POWER R.F. - Boxed Product (Development Kits) 制造商:STMicroelectronics 功能描述:RF POWER TRANSISTOR LDMOS |
| LETBQ6WM | 制造商:OSRAM 功能描述: |
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