參數(shù)資料
型號: LET9085
廠商: 意法半導體
英文描述: RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述: RF功率晶體管LDMOS的增強技術
文件頁數(shù): 1/4頁
文件大?。?/td> 35K
代理商: LET9085
1/4
TARGET DATA
January, 28 2003
LET9085
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
IS-95 CDMA PERFORMANCES
P
OUT
=
20 W
EFF. = 28 %
EDGE PERFORMANCES
P
OUT
=
35 W
EFF. = 35 %
GSM PERFORMANCES
P
OUT
=
75 W
EFF. = 55 %
EXCELLENT THERMAL STABILITY
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
DESCRIPTION
The
LET9085
is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The
LET9085
is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1. Drain
2. Source
3. Gate
1
2
3
M265
epoxy sealed
ORDER CODE
LET9085
BRANDING
LET9085
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
12
A
186
W
200
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.7
°
C/W
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