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參數(shù)資料
| 型號： | LE28FV4001CTS-20 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | EEPROM |
| 英文描述： | 4M-Bit Flash EEPROM |
| 中文描述： | 4分位閃存EEPROM |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 156K |
| 代理商： | LE28FV4001CTS-20 |
LE28FV4001CTS-20
4M-Bit Flash EEPROM
Preliminary Specifications
SANYO Electric Co., Ltd.
8/14
Absolute Maximum Stress Ratings
Temperature Under Bias..........................................................-55
°
C ~ 125
°
C
Storage Temperature................................................................-65
°
C ~ 150
°
C
D.C. Voltage on Any Pin to Grand Potential...........................-0.5V ~ V
CC
+0.5V
Transient Voltage (<20ns) on any Pin to Grand Potential.......-1.0V ~ V
CC
+1.0V
Voltage on A9 to Grand Potential............................................-0.5V ~ 14.0V
Operating Range
Ambient Temperature..............................................................0
°
C ~ 70
°
C
Supply Voltage (V
DD
) .............................................................3.0V ~ 3.6V
DC Operating Characteristics
Symbol
Parameter
Limit
Typ.
Units
Test Condition
Min.
Max.
10
I
CCR
Power Supply Current
(Read)
Power Supply Current
(Write)
Standby V
DD
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
mA
CE
=
OE
=V
IL
,
WE
=V
IH
, all DQs open
Address inputs=V
IH
/ V
IL
, at f=1/tRC, V
DD
=V
DD
max.
CE
=
WE
=V
IL
,
OE
=V
IH
, V
DD
=V
DD
max.
I
CCW
25
mA
I
SB2
15
μA
CE
=V
DD
-0.3V, V
DD
=V
DD
max.
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
10
10
0.6
μA
μA
V
V
V
V
V
IN
=V
SS
~V
DD
, V
DD
=V
DD
max.
V
OUT
=Vss~V
DD
, V
DD
=V
DD
max.
V
DD
=V
DD
max.
V
DD
=V
DD
max.
I
OL
=100
μ
A, V
DD
=V
DD
min.
I
OH
= -100
μ
A, V
DD
=V
DD
min.
-0.3
2.0
Vcc+0.3
0.4
2.4
Power-up Timing
Symbol
Parameter
Minimum
10
10
Units
ms
ms
tPU_READ
tPU_WRITE
Power-up to Read Operation
Power-up to Write Operation
Capacitance (Ta=25
°
C
, f=1MHz)
Symbol
Descriptions
Maximum
12
6
Units
pF
pF
Test Condition
V
DQ
= 0V
V
IN
= 0V
C
DQ
C
IN
DQ Pin Capacitance
Input Capacitance
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