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參數(shù)資料
| 型號： | LE28FV4001CTS-20 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | EEPROM |
| 英文描述： | 4M-Bit Flash EEPROM |
| 中文描述： | 4分位閃存EEPROM |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 156K |
| 代理商： | LE28FV4001CTS-20 |
Preliminary Specifications
CMOS LSI
LE28FV4001CTS-20
4M-Bit (512k × 8) Flash EEPROM
*This product incorporate technology licensed from Silicon Storage Technology, Inc.
This preliminary specification is subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
1-1, 1 Chome, Sakata, Oizumi-machi, Ora-gun, GUNMA, 370-0596 JAPAN
Revision 2.20-February 23,2001-AY/ay-1/14
Features
CMOS Flash EEPROM Technology
Single 3.3-Volt Read and Write Operations
Sector Erase Capability: 256 Bytes per sector
Fast Access Time: 200 ns
Low Power Consumption
Active Current(Read): 10 mA (Max.)
Standby Current: 15
μ
A (Max.)
High Read/Write Reliability
Sector-write Endurance Cycles: 10
4
10 Years Data Retention
Latched Address and Data
Self-timed Erase and Programming
Byte Programming: 40
μ
s (Max.)
End of Write Detection:Toggle Bit/
DATA
Polling
Hardware/Software Data Protection
JEDEC Standard Byte-Wide EEPROM Pinouts
Packages Available
LE28FV4001CTS: 32-pin TSOP Normal(8
×
14mm)
Product Description
The LE28FV4001C is a 512K
×
8 CMOS sector erase,
byte
program
EEPROM.
manufactured using SANYO's proprietary, high performance
CMOS Flash EEPROM technology. Breakthroughs in
EEPROM cell design and process architecture attain better
reliability
and
manufacturability
conventional approaches. The LE28FV4001C erases and
programs with a 3.3-volt only power supply. LE28FV4001C
conforms to JEDEC standard pinouts for byte wide
memories and is compatible with existing industry standard
EPROM, flash EPROM and EEPROM pinouts.
The
LE28FV4001C
is
compared
with
Featuring
LE28FV4001C typically byte programs in 30
μ
s. The
LE28FV4001C typically sector (256 bytes) erases in 2ms.
Both program and erase times can be optimized using
interface feature such as Toggle bit or
DATA
Polling to
indicate the completion of the write cycle. To protect against
an inadvertent write, the LE28FV4001C has on chip hardware
and
software
date
protection
manufactured, and tested for a wide spectrum of applications,
the LE28FV4001C is offered with a guaranteed sector write
endurance of 10
4
cycles. Data retention is rated greater then
10 years.
high
performance
programming,
the
schemes.
Designed,
The LE28FV4001C is best suited for applications that
require reprogrammable nonvolatile mass storage of
program or data memory. For all system applications, the
LE28FV4001C significantly improves performance and
reliability, while lowering power consumption when
compared with floppy diskettes or EPROM approaches.
EEPROM technology makes possible convenient and
economical updating of codes and control programs on-line.
The LE28FV4001C improves flexibility, while lowering the
cost, of program and configuration storage applications.
Figure 1 shows the pin assignments for the 32 lead
Plastic TSOP packages. Figure 2 shows the functional block
diagram of the LE28FV4001C. Pin description and
operation modes can be found in Tables 1 through 3.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the device
using standard microprocessor write sequences. A command
is written by asserting
WE
low while keeping
CE
low.
The address bus is latched on the falling edge of
WE
,
CE
,
whichever occurs last. The data bus is latched on the rising
edge of
WE
,
CE
, whichever occurs first. However, during
the software write protection sequence the address are
latched on the rising edge of
OE
or
CE
, whichever occurs
first.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LE28FV4001M | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4MEG (52488 x 8 Bits) Flash Memory |
| LE28FV4001M-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LE28FV4001R | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4MEG (52488 x 8 Bits) Flash Memory |
| LE28FV4001R-20 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4MEG (52488 x 8 Bits) Flash Memory |
| LE28FV4001R-25 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4MEG (52488 x 8 Bits) Flash Memory |
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