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參數(shù)資料
| 型號： | LE28DW8102T |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 8 Megabit FlashBank Memory LE28DW8102T |
| 中文描述： | 8兆FlashBank內(nèi)存LE28DW8102T |
| 文件頁數(shù)： | 8/19頁 |
| 文件大小： | 338K |
| 代理商： | LE28DW8102T |
8 Megabit FlashBank Memory
LE28DW8102T
8
SANYO Electric Co.,Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.1.01(2/15/2000) No.xxxx-8/19
: -65oC to +150oC
: -0.5V to V
DD
+ 0.5V
: -1.0V to V
DD
+ 1.0V
: 1.0W
: -40oC to +80oC
: 3.0V ± 0.3V
: 5 ns
: C
L
= 30 pF
[Absolute Maximum Stress Ratings]
Applied conditions greater than those listed under "absolute maximum Stress Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in
the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.
Storage Temperature
D. C. Voltage on Any Pin to Ground Potential
Transient Voltage (<20 ns) on Any Pin to Ground Potential
Package Power Dissipation Capability (Ta = 25oC)
[Operating Range]
Ambient Temperature
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Output Load·
(See Figures 10 and 11)
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LE28DW8102T-90 | EEPROM |
| LE28F4001C | 4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001CTS | 4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001CTS-12 | 4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001M | 4 MEG (524288 words x 8 bits) Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LE28DW8102T-90 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:EEPROM |
| LE28F1101T-40 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM |
| LE28F1101T-45 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM |
| LE28F1101T-55 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM |
| LE28F1101T-70 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM |
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