參數(shù)資料
型號: LE28DW1621T-80T
廠商: Sanyo Electric Co.,Ltd.
英文描述: 16 Megabit FlashBank Memory
中文描述: 16兆位內(nèi)存FlashBank
文件頁數(shù): 17/20頁
文件大?。?/td> 347K
代理商: LE28DW1621T-80T
16 Megabit FlashBank Memory
LE28DW1621T-80T (Draft3)
17
SANYO Electric Co.,Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.1.20(4/27/2000) No.xxxx-17/20
AC test inputs are driven at V
IHT
(V
DD
*0.9) for a logic "1"and V
ILT
(V
DD
*0.1) for a logic "0" Measurement reference points for inputs
and outputs are at V
HT
(V
DD
*0.7) and V
LT
(V
DD
*0.3) Input rise and fall times (10% to 90%) are <10 ns.
Figure 13: AC I/O Reference Waveforms
16141\168T\F10_E
REFERENCE POINTS
OUTPUT
INPUT
VHT
VLT
VHT
VLT
VIHT
VILT
Figure 12: Reset Timing
28DW1611\F12_E
TRP
CE#(WE)
RESET#
TREADY
相關(guān)PDF資料
PDF描述
LE28DW1621T 16 Megabit FlashBank Memory
LE28DW8102T 8 Megabit FlashBank Memory LE28DW8102T
LE28DW8102T-90 EEPROM
LE28F4001C 4M-Bit (512k 】 8) Flash EEPROM
LE28F4001CTS 4M-Bit (512k 】 8) Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LE28DW3215AT-80 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
LE28DW8102T 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:8 Megabit FlashBank Memory LE28DW8102T
LE28DW8102T-90 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:EEPROM
LE28F1101T-40 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM
LE28F1101T-45 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM