參數(shù)資料
型號： LDTC143EET1G
廠商： 樂山無線電股份有限公司
英文描述： Bias Resistor Transistors
中文描述： 偏置電阻晶體管
文件頁數(shù)： 2/3頁
文件大?。?/td> 68K
代理商： LDTC143EET1G
LESHAN RADIO COMPANY, LTD.
LDTC143EET1-2/
3
L
DT
C
143EE
T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
–
–
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
–
–
500
nAdc
Emitter-Base Cutoff Current
(V
BE
= 6.0 V)
I
EBO
–
–
1.5
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
μ
A, I
E
= 0)
V
(BR)CBO
50
–
–
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
–
–
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
h
FE
15
–
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 1 mA)
V
CE(sat)
–
–
0.25
Vdc
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
V
OL
–
–
0.2
Vdc
3. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Output Voltage (on)
3.3
4.7 6.1
Resistor Ratio
R
1
/R
2
0.8 1.0 1.2
Input Resistor
R
1
k
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
Output Voltage (off)
V
OH
–
–
Vdc
4.9
30
相關(guān)PDF資料
PDF描述
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