參數(shù)資料
型號: LDTC143EET1G
廠商: 樂山無線電股份有限公司
英文描述: Bias Resistor Transistors
中文描述: 偏置電阻晶體管
文件頁數(shù): 1/3頁
文件大小: 68K
代理商: LDTC143EET1G
LESHAN RADIO COMPANY, LTD.
LDTC
143
EET1-1/
3
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor.The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
LDTC143EET1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Pb-Free Package is Available.
1
3
2
SC-89
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR–4 Board (Note 1.) @ TA = 25
°
C
Derate above 25
°
C
PD
200
1.6
mW
mW/
°
C
Thermal Resistance, Junction to Ambient (Note 1.)
R
θ
JA
PD
600
°
C/W
Total Device Dissipation,
FR–4 Board (Note 2.) @ TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient (Note 2.)
R
θ
JA
TJ, Tstg
400
°
C/W
Junction and Storage Temperature Range
–55 to +150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0
×
1.0 Inch Pad
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LDTC143EET1
8J
3000/Tape&Reel
LDTC143EET1G
8J
(Pb-Free)
3000/Tape&Reel
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
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