參數(shù)資料
型號(hào): LDTC143XLT1G
廠商: 樂山無線電股份有限公司
英文描述: Digital transistors (built-in resistors)
中文描述: 數(shù)字晶體管(內(nèi)置電阻)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 352K
代理商: LDTC143XLT1G
Digital transistors (built-in resistors)
!
Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see the
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3) Only the on/off conditions need to be set for operation, making
device design easy.
!
Structure
NPN digital transistor (with built-in resistors)
We declare that the material of product compliance with
RoHS requirements.
!
Equivalent circuit
R
1
R
2
IN
GND
OUT
IN
GND
OUT
1
3
2
LDTC143XLT1G
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
!
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CC
50
7~
+
20
100
100
150
55~
+
150
V
V
mA
mW
°
C
°
C
V
IN
I
O
I
C(Max.)
Pd
Tj
Tstg
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
2.5
3.29
30
1.7
0.1
4.7
2.1
250
0.3
0.3
1.8
0.5
6.11
2.6
V
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
20mA
I
O
/I
I
=
10mA/0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
V
O
=
5V, I
O
=
10mA
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
V
mA
μ
A
k
MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Transition frequency of the device
200
LDTC143XKALT1G
1/3
Device
Marking
Shipping
ORDERING INFORMATION
10000 Tape & Reel
LDTC143XLT1G 43
3000 Tape & Reel
LDTC143XLT3G 43
LESHAN RADIO COMPANY, LTD.
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LDTC143XLT3G Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: EFP
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