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參數(shù)資料
| 型號： | LC322271J |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write |
| 中文描述： | 2邁可（131072字× 16位），內(nèi)存快速頁面模式，字節(jié)寫 |
| 文件頁數(shù)： | 4/29頁 |
| 文件大小： | 1151K |
| 代理商： | LC322271J |
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DC Recommended Operating Ranges
at Ta = 0 to +70°C
Note: 2. All voltages are referenced to V
SS
.
*
: –2.0 V when pulse width is less than 20 ns.
DC Electrical Characteristics
at Ta = 0 to +70°C, V
CC
= 5 V ± 10%
Note: 3. All current values are measured at minimum cycle rate. Since current flows immoderately, if cycle time is longer than shown here, current value
becomes smaller.
4. I
CC1
and I
CC4
are dependent on output loads. Maximum values for I
CC1
and I
CC4
represent values with output open.
5. Address change is less than or equal to one time during RAS = V
IL
. Concerning I
CC4
, it is less than or equal to one time during 1 cycle (t
PC
).
AC Electrical Characteristics
at Ta = 0 to +70°C, V
CC
= 5 V ± 10% (Notes 6, 7 and 8)
No. 5085-4/29
LC322271J, M, T-70/80
Parameter
Symbol
min
typ
max
Unit
Note
Power supply voltage
V
CC
V
IH
4.5
5.0
5.5
V
2
Input high level voltage
2.4
6.5
V
2
Input low level voltage
(A0 to A7, A8R, RAS, CAS, UW, LW, OE)
V
IL
–1.0
*
+0.8
V
2
Input low level voltage (I/O1 to I/O16)
V
IL
–0.5
*
+0.8
V
2
Parameter
Symbol
-70
-80
Unit
Note
min
max
min
max
Random read, write cycle time
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
CPA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RASP
130
150
ns
Read-write/read-modify-write cycle time
190
200
ns
Fast page mode cycle time
45
55
ns
Fast page mode read-write/read-modify-write cycle time
95
100
ns
RAS access time
70
80
ns
9, 14, 15
CAS access time
20
30
ns
9, 14
Column address access time
35
45
ns
9, 15
CAS precharge access time
40
50
ns
9
Output low-impedance time from CAS low
0
0
ns
9
Output buffer turn-off delay time
0
20
0
20
ns
10
Rise, fall time
3
50
3
50
ns
RAS precharge time
50
60
ns
RAS pulse width
70
10000
80
10000
ns
RAS pulse width for fast page mode cycle only
70
100000
80
100000
ns
Continued on next page.
LC322271J, M, T
Parameter
Symbol
Conditions
-70
-80
Unit
Note
min
max
min
max
Operating current
(Average current during operation)
I
CC1
RAS, CAS, address cycling: t
RC
= t
RC
min
125
115
mA
3, 4, 5
Standby current
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
IL
I
OL
V
OH
V
OL
RAS = CAS = V
IH
RAS cycling, CAS = V
IH
: t
RC
= t
RC
min
RAS = V
IL
, CAS, address cycling: t
PC
= t
PC
min
RAS = CAS = V
CC
– 0.2 V
RAS, CAS cycling: t
RC
= t
RC
min
0 V
≤
V
IN
≤
6.5 V, pins other than test pin = 0 V
D
OUT
disable, 0 V
≤
V
OUT
≤
5.5 V
I
OUT
= –2.5 mA
I
OUT
= 2.1 mA
2
2
mA
RAS-only refresh current
125
115
mA
3, 5
Fast page mode current
115
90
mA
3, 4, 5
Standby current
1
1
mA
CAS-before-RAS refresh current
125
115
mA
3
Input leakage current
–10
+10
–10
+10
μA
Output leakage current
–10
+10
–10
+10
μA
Output high level voltage
2.4
2.4
V
Output low level voltage
0.4
0.4
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LC322271J-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LC322271J-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| LC322271M | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write |
| LC322271M-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LC322271M-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
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