參數(shù)資料
型號(hào)： LBC857BWT1
廠商： 樂(lè)山無(wú)線電股份有限公司
英文描述： General Purpose Transistors PNP Silicon
中文描述： 通用硅晶體管進(jìn)步黨
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 284K
代理商： LBC857BWT1
LESHAN RADIO COMPANY, LTD.
K6–1/6
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V
CEO
–65
–45
–30
V
Collector–Base Voltage
V
CBO
–80
–50
–30
V
Emitter–Base Voltage
V
EBO
–5.0
–5.0
–5.0
V
Collector Current — Continuous
I
C
–100
–100
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
P
D
150
mW
R
θ
JA
T
J
, T
stg
833
°C/W
°C
–55 to +150
DEVICE MARKING
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F;
LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
– 65
(I
C
= –10 mA) V
(BR)CEO
– 30
Collector–Emitter Breakdown Voltage
– 80
(I
C
= –10
μ
A, V
EB
= 0) V
(BR)CES
– 30
Collector–Base Breakdown Voltage – 80
(I
C
= – 10
μ
A) V
(BR)CBO
– 30
Emitter–Base Breakdown Voltage – 5.0
(I
E
= – 1.0
μ
A) V
(BR)EBO
– 5.0
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
– 45
v
– 50
v
– 50
v
– 5.0
v
I
CBO
—
—
nA
μ
A
1.FR–5=1.0 x 0.75 x 0.062in
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
Pb–
Pb Free Lead Finish
–
1
3
2
LBC856AWT1, BWT1
LBC857AWT1, BWT1
LBC858AWT1, BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
LBC856 Series
LBC857 Series
LBC856 Series
LBC856 Series
LBC857 Series
LBC856 Series
LBC857 Series
SOT– 323 / SC-70
相關(guān)PDF資料
PDF描述
LBC858AWT1 General Purpose Transistors PNP Silicon
LBC858BWT1 General Purpose Transistors PNP Silicon
LBC858CWT1 General Purpose Transistors PNP Silicon
LBC856BDW1T1 Dual General Purpose Transistors
LBC857BDW1T1 Dual General Purpose Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LBC857BWT1G 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
LBC857CDW1T1 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Dual General Purpose Transistors
LBC857CDW1T1G 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Dual General Purpose Transistors
LBC857CLT1 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
LBC857CLT1G 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
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