參數(shù)資料
型號: LBC856BDW1T1
廠商: 樂山無線電股份有限公司
英文描述: Dual General Purpose Transistors
中文描述: 雙通用晶體管
文件頁數(shù): 1/6頁
文件大小: 250K
代理商: LBC856BDW1T1
LBC856–1/6
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
Device Marking:
L
BC856BDW1T1 = 3B
L
BC857BDW1T1 = 3F
L
BC857CDW1T1 = 3G
L
BC858BDW1T1 = 3K
L
BC858CDW1T1 = 3L
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V
CEO
–65
–45
–30
V
Collector–Base Voltage
V
CBO
–80
–50
–30
V
Emitter–Base Voltage
V
EBO
–5.0
–5.0
–5.0
V
Collector Current –
Continuous
I
C
–100
–100
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
T
A
= 25
°
C
Derate Above 25
°
C
P
D
380
250
3.0
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
JA
328
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to +150
°
C
1. FR–5 = 1.0 x 0.75 x 0.062 in
Device
Package
Shipping
L
BC857BDW1T
1
SOT–363
3000 Units/Reel
DEVICE MARKING
L
BC857CDW1T
1
SOT–36
3
3000 Units/Reel
L
BC858BDW1T
1
SOT–363
3000 Units/Reel
L
BC858CDW1T
1
SOT–363
3000 Units/Reel
L
BC856BDW1T
1
SOT–363
3000 Units/Reel
See Table
ORDERING INFORMATION
LBC856*DW1T1
1
2
3
4
5
6
SOT-363
Q
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
相關PDF資料
PDF描述
LBC857BDW1T1 Dual General Purpose Transistors
LBC857CDW1T1 Dual General Purpose Transistors
LBC858BDW1T1 Dual General Purpose Transistors
LBC858CDW1T1 Dual General Purpose Transistors
LBC856 General Purpose Transistors PNP Silicon
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