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參數(shù)資料
| 型號： | LBC856BDW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors |
| 中文描述： | 雙通用晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 250K |
| 代理商： | LBC856BDW1T1 |
LESHAN RADIO COMPANY, LTD.
LBC856 –2/6
L
BC856BDW1T1,
L
BC857BDW1T1,
L
BC857CDW1T1,
L
BC858BDW1T1,
L
BC858CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
L
BC857 Series
L
BC858 Series
V
(BR)CEO
–65
–45
–30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage
(I
C
= –10
μ
A, V
EB
= 0)
L
BC856 Series
L
BC857 Series
L
BC858 Series
V
(BR)CES
–80
–50
–30
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(I
C
= –10 A)
L
BC856 Series
L
BC857 Series
L
BC858 Series
V
(BR)CBO
–80
–50
–30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(I
E
= –1.0 A)
L
BC856 Series
L
BC857 Series
L
BC858 Series
V
(BR)EBO
–5.0
–5.0
–5.0
–
–
–
–
–
–
V
Collector Cutoff Current (V
CB
= –30 V)
Collector Cutoff Current
(V
CB
= –30 V, T
A
= 150
°
C)
I
CBO
–
–
–
–
–15
–4.0
nA
μ
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= –10
μ
A, V
CE
= –5.0 V)
L
BC856B,
L
BC857B,
L
BC858B
L
BC857C,
L
BC858C
(I
C
= –2.0 mA, V
CE
= –5.0 V)
L
BC856B,
L
BC857B,
L
BC858B
L
BC857C,
L
BC858C
h
FE
–
–
220
420
150
270
290
520
–
–
475
800
–
Collector–Emitter Saturation Voltage
(I
C
= –10 mA, I
B
= –0.5 mA)
(I
C
= –100 mA, I
B
= –5.0 mA)
V
CE(sat)
–
–
–
–
–0.3
–0.65
V
Base–Emitter Saturation Voltage
(I
C
= –10 mA, I
B
= –0.5 mA)
(I
C
= –100 mA, I
B
= –5.0 mA)
V
BE(sat)
–
–
–0.7
–0.9
–
–
V
Base–Emitter On Voltage
(I
C
= –2.0 mA, V
CE
= –5.0 V)
(I
C
= –10 mA, V
CE
= –5.0 V)
V
BE(on)
–0.6
–
–
–
–0.75
–0.82
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 Vdc, f = 100 MHz)
f
T
100
–
–
MHz
Output Capacitance
(V
CB
= –10 V, f = 1.0 MHz)
C
ob
–
–
4.5
pF
Noise Figure
(I
C
= –0.2 mA, V
CE
= –5.0 Vdc, R
S
= 2.0 k
,
f = 1.0 kHz, BW = 200 Hz)
NF
–
–
10
dB
LBC856 Series
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC857BDW1T1 | Dual General Purpose Transistors |
| LBC857CDW1T1 | Dual General Purpose Transistors |
| LBC858BDW1T1 | Dual General Purpose Transistors |
| LBC858CDW1T1 | Dual General Purpose Transistors |
| LBC856 | General Purpose Transistors PNP Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC856BLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC856BLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC856BLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC856BWT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC856BWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
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