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參數(shù)資料
| 型號(hào)： | LBC858BWT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | LBC858BWT1 |
LESHAN RADIO COMPANY, LTD.
K6–1/6
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V
CEO
–65
–45
–30
V
Collector–Base Voltage
V
CBO
–80
–50
–30
V
Emitter–Base Voltage
V
EBO
–5.0
–5.0
–5.0
V
Collector Current — Continuous
I
C
–100
–100
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
P
D
150
mW
R
θ
JA
T
J
, T
stg
833
°C/W
°C
–55 to +150
DEVICE MARKING
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F;
LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
– 65
(I
C
= –10 mA) V
(BR)CEO
– 30
Collector–Emitter Breakdown Voltage
– 80
(I
C
= –10
μ
A, V
EB
= 0) V
(BR)CES
– 30
Collector–Base Breakdown Voltage – 80
(I
C
= – 10
μ
A) V
(BR)CBO
– 30
Emitter–Base Breakdown Voltage – 5.0
(I
E
= – 1.0
μ
A) V
(BR)EBO
– 5.0
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
– 45
v
– 50
v
– 50
v
– 5.0
v
I
CBO
—
—
nA
μ
A
1.FR–5=1.0 x 0.75 x 0.062in
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
Pb–
Pb Free Lead Finish
–
1
3
2
LBC856AWT1, BWT1
LBC857AWT1, BWT1
LBC858AWT1, BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
LBC856 Series
LBC857 Series
LBC856 Series
LBC856 Series
LBC857 Series
LBC856 Series
LBC857 Series
SOT– 323 / SC-70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC858CWT1 | General Purpose Transistors PNP Silicon |
| LBC856BDW1T1 | Dual General Purpose Transistors |
| LBC857BDW1T1 | Dual General Purpose Transistors |
| LBC857CDW1T1 | Dual General Purpose Transistors |
| LBC858BDW1T1 | Dual General Purpose Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC858BWT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC858CDW1T1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Dual General Purpose Transistors |
| LBC858CLT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC858CLT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC858CLT3G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
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