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參數(shù)資料
| 型號： | LBC856AWT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進步黨 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 284K |
| 代理商： | LBC856AWT1 |
LESHAN RADIO COMPANY, LTD.
K6–4/6
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
V
BE(sat)
@ I
C
/I
B
=10
V
BE
@V
CE
= –5.0 V
T
J
= 25°C
V
CE
= –5.0V
T
A
= 25°C
V
CE(sat)
@ I
C
/I
B
= 10
V
θ
V
V
I
C
=
–10mA
–100mA
–20mA
–200mA
T
J
= 25°C
θ
VB
for V
BE
–55°C to 125°C
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–1.0
–0.8
–0.6
–0.4
–0.2
0
2.0
1.0
0.5
0.2
–2.0
–1.6
–1.2
–0.8
–0.4
0
–0.02
–0.1–0.2
–1.0 –2.0 –5.0–10 –20
–50 –100–200
–0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
–0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
–0.05 –0.1
–0.2
–0.5
–1.0 –2.0
–5.0
–10 –20
h
F
–50mA
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
C
f
T
,
C
ob
C
ib
T
J
= 25°C
V
CE
= –5.0V
–0.1 –0.2 –0.5
–1.0 –2.0
–5.0
–10 –20
–50
–100
–1.0
–10
–100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
LBC856AWT1, BWT1 LBC857AWT1, BWT1, LBC858AWT1, BWT1, CWT1
LBC856
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LBC856AWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
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| LBC856BLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC856BLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
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