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參數(shù)資料
| 型號： | LBC846BPDW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| 中文描述： | 雙通用晶體管npn型/進(jìn)步黨對偶（免費） |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 254K |
| 代理商： | LBC846BPDW1T1 |
LESHAN RADIO COMPANY, LTD.
TYPICAL NPN CHARACTERISTICS –
LB
C847 SERIES &
L
BC848 SERIES
Figure 13. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 14. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2
0.5
1.0
10
20
50
0.2
100
Figure 15. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 16. Base–Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
2.0
5.0
200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
h
V
V
V
θ
°
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.5
1.0
10
20
50
2.0
100
70
30
7.0
5.0
3.0
0.7
0.3
0.1
0.2
1.0
10
100
TA = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25
°
C
-55
°
C to +125
°
C
TA = 25
°
C
IC = 50 mA
IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 17. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 18. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4
0.6
1.0
10
20
1.0
2.0
6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7
1.0
10
20
2.0
50
30
7.0
5.0
3.0
0.5
VCE = 10 V
TA = 25
°
C
C
f
T
0.8
4.0
8.0
TA = 25
°
C
Cob
Cib
L
BC846BPDW1T1,
L
BC847BPDW1T1 Series,
L
BC848BPDW1T1 Series
LBC846BP–6/9
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| LBC846BPDW1T1G | 制造商: 功能描述:TRANSISTOR DUAL 100MA 65V |
| LBC846BPDW1T1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC846BWT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC846BWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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