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參數(shù)資料
| 型號(hào)： | LBC846BPDW1T1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| 中文描述： | 雙通用晶體管npn型/進(jìn)步黨對(duì)偶（免費(fèi)） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 254K |
| 代理商： | LBC846BPDW1T1 |
LESHAN RADIO COMPANY, LTD.
LBC846BP
-
1/9
Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
Device Marking:
LBC846BPDW1T1 = BB
LBC847BPDW1T1 = 13F
LBC847CPDW1T1 = 13G
LBC848BPDW1T1 = 13K
LBC848CPDW1T1 = 13L
1
3
2
SOT
-
363/SC-88
CASE 419B STYLE 1
6
4
5
MAXIMUM RATINGS
-
NPN
Rating
Symbol
LBC846 LBC847 LBC848
Unit
Collector
-
Emitter Voltage
VCEO
VCBO
VEBO
IC
65
45
30
V
Collector
-
Base Voltage
80
50
30
V
Emitter
-
Base Voltage
6.0
6.0
5.0
V
Collector Current D
Continuous
100
100
100
mAdc
MAXIMUM RATINGS
-
PNP
Rating
Symbol
LBC846 LBC847 LBC848
-
65
-
45
-
80
-
50
-
5.0
-
5.0
-
100
-
100
Unit
Collector
-
Emitter Voltage
VCEO
VCBO
VEBO
IC
-
30
-
30
-
5.0
-
100
V
Collector
-
Base Voltage
V
Emitter
-
Base Voltage
V
Collector Current D
Continuous
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Per Device
FR
-
5 Board (1)
TA = 25C
Derate Above 25C
PD
380
250
3.0
mW
mW/C
Thermal Resistance,
Junction to Ambient
R
θ
JA
328
C/W
Junction and Storage
Temperature Range
TJ, Tstg
-
55 to +150
C
1. FR
-
5 = 1.0 x 0.75 x 0.062 in
Device
Package
Shipping
ORDERING INFORMATION
LBC846BPDW1T1
SOT
-
363
3000 Units/Reel
LBC847BPDW1T1
SOT
-
363
3000 Units/Reel
LBC847CPDW1T1
SOT
-
363
3000 Units/Reel
LBC848BPDW1T1
SOT
-
363
3000 Units/Reel
LBC848CPDW1T1
SOT
-
363
3000 Units/Reel
DEVICE MARKING
See Table
LBC846BPDW1T1
LBC847BPDW1T1
LBC847CPDW1T1
LBC848BPDW1T1
LBC848CPDW1T1
4
6
5
3
1
2
Q
2
Q
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC847BPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC847CPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC848BPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC848CPDW1T1 | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC846 | General Purpose Transistors NPN Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC846BPDW1T1G | 制造商: 功能描述:TRANSISTOR DUAL 100MA 65V |
| LBC846BPDW1T1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| LBC846BWT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC846BWT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| LBC847 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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