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參數(shù)資料
| 型號(hào)： | LBC846BPDW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors NPN/PNP Duals (Complimentary) |
| 中文描述： | 雙通用晶體管npn型/進(jìn)步黨對(duì)偶（免費(fèi)） |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 254K |
| 代理商： | LBC846BPDW1T1 |
LESHAN RADIO COMPANY, LTD.
L
BC846BPDW1T1,
L
BC847BPDW1T1 Series,
L
BC848BPDW1T1 Series
TYPICAL NPN CHARACTERISTICS –
L
BC846
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1
1.0
10
100
0.2
0.2
0.5
0.2
1.0
10
200
TA = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
h
V
VCE = 5 V
TA = 25
°
C
0
0.5
2.0
5.0
20
50
100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V
V
θ
°
0.2
2.0
10
200
1.0
TA = 25
°
C
200 mA
50 mA
IC =
10 mA
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
0.5
5.0
20
50
100
-55
°
C to 125
°
C
θ
VB for VBE
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1
0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
50
100
5.0
VCE = 5 V
TA = 25
°
C
C
f
T
0.5
5.0
20
TA = 25
°
C
Cob
Cib
LBC846BP–4/9
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