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參數(shù)資料
| 型號： | L800BB90VK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 25/49頁 |
| 文件大?。?/td> | 859K |
| 代理商： | L800BB90VK |
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Am29LV800B
23
If the output is low (Busy), the device is actively
erasing or programming. (This includes programming
in the Erase Suspend mode.) If the output is high
(Ready), the device is ready to read array data
(including during the Erase Suspend mode), or is in
the standby mode.
Table 2 shows the outputs for RY/BY#. Figures 13, 14,
17 and 18 shows RY/BY# for read, reset, program,
and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any
address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address
cause DQ6 to toggle. (The system may use either
OE# or CE# to control the read cycles.) When the
operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6
toggles for approximately 100 μs, then returns to
reading array data. If not all selected sectors are pro-
tected, the Embedded Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that
is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the
system must also use DQ2 to determine which
sectors are erasing or erase-suspended. Alterna-
tively, the system can use DQ7 (see the subsection on
“DQ7: Data# Polling”).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 μs after the program
command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded
Program algorithm is complete.
Table 2 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 20 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 21 shows the differences
between DQ2 and DQ6 in graphical form. See also the
subsection on “DQ2: Toggle Bit II”.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in
progress), or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the final
WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector
and mode information. Refer to Table 2 to compare
outputs for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains
the algorithm. See also the “DQ6: Toggle Bit I” sub-
section. Figure 20 shows the toggle bit timing dia-
gram. Figure 21 shows the differences between DQ2
and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. When-
ever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typi-
cally, the system would note and store the value of
the toggle bit after the first read. After the second
read, the system would compare the new value of the
toggle bit with the first. If the toggle bit is not tog-
gling, the device has completed the program or erase
operation. The system can read array data on DQ7–
DQ0 on the following read cycle.
However, if after the initial two read cycles, the
system determines that the toggle bit is still toggling,
the system also should note whether the value of DQ5
is high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped tog-
gling just as DQ5 went high. If the toggle bit is no
longer toggling, the device has successfully com-
pleted the program or erase operation. If it is still tog-
gling, the device did not completed the operation
successfully, and the system must write the reset
command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5
has not gone high. The system may continue to
monitor the toggle bit and DQ5 through successive
read cycles, determining the status as described in
the previous paragraph. Alternatively, it may choose
to perform other system tasks. In this case, the
system must start at the beginning of the algorithm
when it returns to determine the status of the opera-
tion (top of Figure 6).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle
was not successfully completed.
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PDF描述 |
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| L800BT12VC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VD | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| L800BT12VC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VD | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| L800BT12VI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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