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參數(shù)資料
| 型號： | L642DU12RI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 128兆位（8米× 16位）的CMOS 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /輸出⑩控制 |
| 文件頁數(shù)： | 38/54頁 |
| 文件大?。?/td> | 520K |
| 代理商： | L642DU12RI |
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36
Am29LV642D
25022A2 May 5, 2006
D A T A S H E E T
DC CHARACTERISTICS
(For Two Am29LV640 Devices)
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Assumes only one Am29LV640 die being programmed at the same time.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is
400 nA.
6. If V
IO
< V
CC
, maximum V
IL
for CE# (or CE2#)
is 0.3 V
IO
. If V
IO
< V
CC
, minimum V
IH
for CE# (or CE2#)
is 0.3 V
IO
.
7. Not 100% tested.
8. CE# can be replaced with CE2# when referring to the second device within the package.
9. Specifications in the table are for the Am29LV642 i.e. two Am29LV640 dice unless otherwise noted .
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, ACC Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
70
μA
I
LO
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
CE# (or CE2#) = V
IL
,
OE# =
V
IH
5 MHz
9
16
mA
1 MHz
2
4
I
CC2
V
CC
Active Write Current (Notes 2, 3,
4)
CE# (or CE2#) = V
IL
, OE# =
V
IH
26
30
mA
I
CC3
I
CC4
V
CC
Standby Current (Note 2)
V
CC
Reset Current (Note 2)
CE#, CE2#, RESET# = V
CC
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
CC
±
0.3 V; V
IL
= V
SS
±
0.3 V
0.4
10
μA
0.4
10
μA
I
CC5
Automatic Sleep Mode (Notes 2, 5)
0.4
10
μA
I
ACC
ACC Accelerated Program Current
(Note 4)
CE# = V
IL
, OE# = V
IH
ACC pin
5
10
mA
V
CC
pin
15
30
mA
V
IL
Input Low Voltage (Note 6)
–0.5
0.8
V
V
IH
Input High Voltage (Note 6)
0.7 x V
CC
V
CC
+ 0.3
V
V
HH
Voltage for ACC Program
Acceleration
V
CC
= 3.0 V ± 10%
11.5
12.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 3.0 V
±
10%
8.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
V
OH2
V
LKO
Output High Voltage (Note 7)
I
OH
= –2.0 mA, V
CC
= V
CC min
I
OH
= –100 μA, V
CC
= V
CC min
0.85 V
IO
V
IO
–0.4
2.3
V
V
Low V
CC
Lock-Out Voltage (Note 7)
2.5
V
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