參數(shù)資料
型號： L640MU90RI
廠商： Advanced Micro Devices, Inc.
元件分類： DRAM
英文描述： 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
中文描述： 64Mb(4個M x 16位)的MirrorBit，3V，統(tǒng)一扇區(qū)閃存并有Versatile輸入/輸出控制
文件頁數(shù)： 58/59頁
文件大?。?/td> 699K
代理商： L640MU90RI
56
Am29LV640MU
25301C5 February1,2007
D A T A S H E E T
Revision B+4 (February 16, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Added note 2.
Ordering Information
Corrected Valid Combination to reflect speed option
changes.
Added Note.
AC Characteristics
Removed 90R speed option.
Added Note
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added notes
5 and 6.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 4.
Revision C (March 11, 2003)
Product Selector Guide and AC Characteristics,
Read Only Operations Table
Added separate values for the 112 and 120 ns speed
options in the Page access times and OE# access
time.
Ordering Information
Removed note from sector architecture.
Table 3. Autoselect Codes, (High Voltage Method)
Updated DQ15 to DQ0 for Sector Protection Verifica-
tion and Secured Silicon Sector Indicator Bit.
Secured SiliconSector Flash Memory Region
Updated second bullet in Customer Lockable section.
Added Figure 3.
Command Definitions
Updated first paragraph.
Table 3. Autoselect Codes, (High Voltage Method)
Table 10. Command Definitions
Corrected Note #10 to read 98h for factory locked and
18h for not factory locked.
Operating Ranges
Added a V
CC
for regulated voltage and added standard
voltage range title for remaining V
CC.
CMOS Compatible
Added I
LR
parameter symbol.
Updated I
CC
parameter symbol.
Revision C+1 (June 12, 2003)
Ordering Information
Added 90R speed grade, modified note.
Erase and Programming Performance
Modified table, inserted values for Typical.
Revision C+2 (February 13, 2004)
Writing Commands/Command Sequence
Removed byte reference.
Word/Byte Program Command Sequence
Removed byte reference.
Erase Suspend/Erase Resume Commands
Added note on flash device performance during
suspend/erase mode
.
Table 10: Command Definitions
Replaced the Addr information for Program/Erase
Suspend and Program/Erase Resume from BA to
XXX.
AC Characteristics - Erase and Program
Operations, and Alternate CE# Controlled Erase
and Program Operations
Added t
POLL
information.
AC Characteristics Figures - Program Operation
Timings, Data# Polling Timings (During Embedded
Algorithms, and Alternate CE# Controlled Write
(Erase/Program) Operation Timings
Updated figures with t
POLL
information.
Erase and Programming Performance
Removed byte reference. Incorporated comments 6 &
7 to table.
Trademarks
Updated.
Revision C + 3 (August 23, 2004)
Added Max programming specifications.
Added notation referencing superseding documenta-
tion.
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