參數(shù)資料
型號(hào)： L640MU90RI
廠商： Advanced Micro Devices, Inc.
元件分類： DRAM
英文描述： 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
中文描述： 64Mb(4個(gè)M x 16位)的MirrorBit，3V，統(tǒng)一扇區(qū)閃存并有Versatile輸入/輸出控制
文件頁(yè)數(shù)： 3/59頁(yè)
文件大小： 699K
代理商： L640MU90RI
Publication#
25301
Issue Date:
February 1, 2007
Rev:
C
Amendment/
5
DATA SHEET
Am29LV640MU
64 Megabit (4 M x 16-Bit) MirrorBit
3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
VersatileI/O
control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
IO
pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 μm MirrorBit process
technology
Secured Silicon Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 μs typical effective write buffer word programming
time: 16-word write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word page read buffer
— 16-word write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 μA typical standby mode current
Package options
— 63-ball Fine-Pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— ACC (high voltage) input accelerates programming
time for higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV640M U and is the factory-recommended migration path.
Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
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