參數(shù)資料
型號(hào)： L640MU12PI
廠商： Advanced Micro Devices, Inc.
元件分類： DRAM
英文描述： 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
中文描述： 64Mb(4個(gè)M x 16位)的MirrorBit，3V，統(tǒng)一扇區(qū)閃存并有Versatile輸入/輸出控制
文件頁(yè)數(shù)： 53/59頁(yè)
文件大?。?/td> 699K
代理商： L640MU12PI
February1,2007 25301C5
Am29LV640MU
51
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
. Programming specifications assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
4. For 1-16 words programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word basis for a 16-word write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table
10
for
further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Excludes 00h
programming prior to
erasure
(Note 6)
Chip Erase Time
64
128
sec
Single Word Program Time
(Note 3)
100
800
μs
Excludes system level
overhead
(Note 7)
Accelerated Single Word Program Time
(Note 3)
90
720
μs
Total Write Buffer Program Time
(Note 4)
352
1800
μs
Effective Word Program Time, using the Write Buffer
(Note 5)
22
113
μs
Total Accelerated Write Buffer Program Time
(Note 4)
282
1560
μs
Effective Accelerated Word Program Time, using the
Write Buffer
(Note 4)
17.6
98
μs
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
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L640MU12RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640MU12VI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640MU90NI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L640MU90RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
L641 制造商:CRYDOM 制造商全稱:Crydom Inc., 功能描述:Power Modules
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