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參數(shù)資料
| 型號(hào)： | L640MU12PI |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
| 中文描述： | 64Mb(4個(gè)M x 16位)的MirrorBit，3V，統(tǒng)一扇區(qū)閃存并有Versatile輸入/輸出控制 |
| 文件頁(yè)數(shù)： | 28/59頁(yè) |
| 文件大?。?/td> | 699K |
| 代理商： | L640MU12PI |
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26
Am29LV640MU
25301C5 February1,2007
D A T A S H E E T
decremented for every data load operation. The host
system must therefore account for loading a
write-buffer location more than once. The counter dec-
rements for each data load operation, not for each
unique write-buffer-address location. Additionally, the
last data loaded prior to the Program Buffer to Flash
command will be programmed into the device. Note
also that if an address location is loaded more than
once into the buffer, the final data loaded for that ad-
dress will be programmed.
Once the specified number of write buffer locations
have been loaded, the system must then write the Pro-
gram Buffer to Flash command at the sector address.
Any other address and data combination aborts the
Write Buffer Programming operation. The device then
begins programming. Data polling should be used
while monitoring the last address location loaded into
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be
monitored to determine the device status during Write
Buffer Programming.
The write-buffer programming operation can be sus-
pended using the standard program suspend/resume
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be
aborted in the following ways:
■
Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■
Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
■
Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
■
Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Accelerated Program
The device offers accelerated program operations
through the ACC pin. When the system asserts V
HH
on
the ACC pin, the device automatically enters the Un-
lock Bypass mode. The system may then write the
two-cycle Unlock Bypass program command se-
quence. The device uses the higher voltage on the
ACC pin to accelerate the operation.
Note that the
ACC pin must not be at V
HH
for operations other than
accelerated programming, or device damage may re-
sult.
Figure 4 illustrates the algorithm for the program oper-
ation. Refer to the
Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 16 for timing diagrams.
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相關(guān)代理商/技術(shù)參數(shù) |
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| L640MU12RI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640MU12VI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640MU90NI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640MU90RI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L641 | 制造商:CRYDOM 制造商全稱:Crydom Inc., 功能描述:Power Modules |
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