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參數(shù)資料
| 型號： | L640MU12PI |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control |
| 中文描述： | 64Mb(4個M x 16位)的MirrorBit，3V，統(tǒng)一扇區(qū)閃存并有Versatile輸入/輸出控制 |
| 文件頁數(shù)： | 40/59頁 |
| 文件大小： | 699K |
| 代理商： | L640MU12PI |
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38
Am29LV640MU
25301C5 February1,2007
D A T A S H E E T
TEST CONDITIONS
Table 12.
Test Specifications
Note:
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
KEY TO SWITCHING WAVEFORMS
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 12.
Test Setup
Test Condition
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 V
IO
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
0.5 V
IO
V
Output
Measurement Level
Input
Note:
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Figure 13.
Input Waveforms and
Measurement Levels
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| L640MU12RI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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| L640MU90NI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L640MU90RI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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