參數(shù)資料
型號(hào): L6000
廠商: 意法半導(dǎo)體
英文描述: SINGLE CHIP READ & WRITE CHANNEL
中文描述: 單芯片讀
文件頁數(shù): 9/24頁
文件大小: 279K
代理商: L6000
PULSE DETECTOR AND SERVO DEMODULATOR CHARACTERISTICS
Symbol
Parameter
Test Condition
Min.
27
Typ.
28
Max.
Unit
dB/V
Gain Sensititivity with respect to
DATA BYP or SERVO BYPS
pin voltage changes
THD
AGC OUT/
AGC OUT
AGCOUT - AGCOUT= 0.75Vpp
40
dB
Differential Input Impedance
Single Ended Input Impedance
WG = low
WG = low
WG = High or when IN Low - Z
mode
Filter not connected
AGC OUT, Rs = 0
, gain = 22
gain = 22
(1)
I
O
= 0
4.7
2.5
6
8.4
4.5
0.8
K
K
K
3.5
0.65
VOO
en
BW
Output Offset Voltage
Input Noise Voltage
Bandwidth
Single ended output resistance
– 200
50
10
140
+200
15
180
mV
nV/
MHz
AGC OUT/
AGC OUT
PSRR
CMRR
Power Supply Rejection Ratio
Common Mode Rejection Ratio
Gain Decay Time
gain = 22, Fin = 5MHz
45
40
dB
dB
μ
s
53
AGC IN-AGC IN = 240mVpp to
120mVpp,
AGC OUT-AGC OUT = 0.9
Final Value
AGC IN-AGC IN = 120mVpp to
240mVpp,
AGC OUT-AGC OUT = 1.1
Final Value
Gain Attack Time
2
μ
s
AGC Control Section
The input signal are AC coupled to DATA PATH and DATAPATH, C = 1000pF.
DATA PATH/
DATAPATH
Id
Discharge Current
Idf
Fast Discharge
Signal Input range
(bench test only)
1
1.5
Vpp
2.8
20xld
–30%
0.126
4
5.2
20xld
+30%
0.234
μ
A
μ
A
During Fast Decay mode
Current
DATA PATH-DATAPATH =
1.15Vpp
DATA PATH-DATAPATH =
1.45V
WG = high
20xld
Ich
Charge Pump Attack Current
0.18
μ
A
Ichf
Charge Pump Fast Attack
Current
DATA BYP Pin Leakage Current
Reference Voltage
7xlch
–30%
-0.1
Vcc
PULSE
DET-
2.47
7xlch
7xlch
+30%
+0.1
Vcc
PULSE
DET-
2.0
μ
A
μ
A
V
LEVELREFV
LEVEL REF V Output Drive
Duration of shorted input and
Fast Decay modes
Level Output Gain
-0.75
1
0.75
mA
μ
s
(*)
DATA PATH-DATAPATH = 0.5
to 1Vpp
f
IN
= 11MHz
Output - LEVEL REF V
(I
L
= 40
μ
A)
0.60
0.67
0.75
V/Vpp
Level Output Bandwidth
Level Offset Voltage
2
dB
(2)
mV
(2)
–40
+40
(*)
Guaranted by design.
(1) For correlation automatic test is performed at –3.8dB.
(2) Test limitsunder evaluation.
L6000
9/24
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