2004 IXYS All rights reserved
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DSEP 8-06B
4
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
V
RRM
= 600 V
t
rr
= 30 ns
= 10 A
V
RSM
V
V
RRM
V
Type
600
600
DSEP 8-06B
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
35
10
A
A
T
C
= 125°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 0.9 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
50
A
0.1
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
0.1
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
mounting torque
60
W
0.4...0.6
Nm
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
①
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 10 A;
V
R
= V
RRM
60
μA
mA
0.25
V
F
②
T
VJ
= 150°C
T
VJ
= 25°C
1.66
2.66
V
V
R
thJC
R
thCH
t
rr
2.5
K/W
K/W
0.5
I
F
= 1 A; -di/dt = 50 A/μs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
30
ns
I
RM
2.4
A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
reduces:
- Power dissipation within the diode
- Turn-on oss n the commutating switch
Dimensions see Outlines.pdf
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
μ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified:
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
C
A