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參數(shù)資料
| 型號： | L412 |
| 廠商： | IXYS Corporation |
| 英文描述： | High Voltage BIMOSFET |
| 中文描述： | 高壓BIMOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 91K |
| 代理商： | L412 |
2000 IXYS All rights reserved
1 - 4
0
IXYS reserves the right to change limits, test conditions and dimensions.
Features
High Voltage BIMOSFET
TM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
switched mode power supplies
DC-DC converters
resonant converters
lamp ballasts
laser generators, x ray generators
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
IXBF 9N140
IXBF 9N160
1400
1600
V
V
V
GES
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
7
4
A
A
I
CM
V
CEK
V
= 15/0 V; R
= 100 ; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
12
A
0.8V
CES
P
tot
T
C
= 25°C
70
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 5 A; V
GE
= 15 V; T
VJ
= 25°C
4.9
5.6
7
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 0.5 mA; V
GE
= V
CE
4
8
V
I
CES
V
CE
= 0.8V
CES
;
V
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.1
mA
mA
0.1
I
GES
V
CE
= 0 V; V
GE
= 20 V
500
nA
t
d(on)
t
r
t
d(off)
t
f
200
60
180
40
ns
ns
ns
ns
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 7 A
550
44
pF
nC
V
F
(reverse conduction); I
F
= 5 A
3.6
V
R
thJC
1.75 K/W
Inductive load, T
= 125°C
V
CE
= 960 V; I
= 5 A
V
GE
= 15/0 V; R
G
= 100
Advanced Technical Information
IXBF 9N140
IXBF 9N160
1
5
I
C25
V
CES
V
CE(sat)
= 4.9V
t
f
= 7 A
= 1400/1600 V
= 40 ns
High Voltage
BIMOSFET
TM
in High Voltage
ISOPLUS i4-PAC
TM
Monolithic Bipolar MOS Transistor
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