參數資料
型號： KSP2907ATA
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： PNP General Purpose Amplifier
中文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： TO-92, 3 PIN
文件頁數： 1/5頁
文件大小： 111K
代理商： KSP2907ATA
2006 Fairchild Semiconductor Corporation
KSP2907A Rev. E
1
www.fairchildsemi.com
K
tm
September 2006
KSP2907A
PNP General Purpose Amplifier
Features
Collector-Emitter Voltage: V
CEO
= 60V
Collector Power Dissipation: P
C
(max)=625mW
Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)
Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)
Available as PN2907A
Absolute Maximum Ratings *
T
a
= 25
°
C unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector current
T
J
Junction Temperature
T
stg
Storage Temperature
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
P
C
Collector Power Dissipation, by R
θ
JA
R
θ
JC
Thermal Resistance, Junction to Case(note1)
R
θ
JA
Thermal Resistance, Junction to Ambient(note2)
Note1. Infinite heat sink.
Note2. Minimum Land pad size.
Electrical Characteristics *
T
a
= 25°C unless otherwise noted
Symbol
Parameter
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
h
FE
DC Current Gain
* DC Item are tested by Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Value
-60
-60
-5
-600
+150
-55 ~ +150
Units
V
V
V
mA
°
C
°
C
Parameter
Max
625
83.3
200
Units
mW
°
C/W
°
C/W
Test Condition
Min.
-60
-60
-5.0
Typ.
Max. Units
I
C
= -10
μ
A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CE
= -10V, I
C
= -0.1mA,
V
CE
= -10V, I
C
= -1mA,
V
CE
= -10V, I
C
= -10mA,
V
CE
= -10V, I
C
= -150mA,
V
CE
= -10V, I
C
= -500mA,
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CB
= -10V, I
E
= 0, f = 1.0MHz
I
C
= -50mA, V
CE
= -20V,
f = 100MHz
V
CC
= -30V, I
C
= -150mA, I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA,I
B1
= I
B1
= -15mA
V
V
V
nA
-10
75
100
100
100
50
300
V
CE(sat)
Collector-Emitter Saturation Voltage
-0.4
-1.6
-1.3
-2.6
8
V
V
V
V
pF
MHz
V
BE(sat)
Base-Emitter Saturation Voltage
C
obo
f
T
Output Capacitance
Current Gain Bandwidth Product
200
t
ON
t
OFF
Turn On Time
Turn Off Time
45
100
ns
ns
KSP2907A : 1. Emitter 2. Base 3. Collector
KSP2907AC : 1. Emitter 2. Collector 3. Base
TO-92
1 2 3
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