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參數(shù)資料
| 型號(hào)： | KSQ60A06B |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diode |
| 中文描述： | 60 A, 60 V, SILICON, RECTIFIER DIODE |
| 封裝： | SIMILAR TO TO-247AC (TO-3P), 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | KSQ60A06B |
SBD
T y pe :
K SQ60A06B
OULINE DRAWING
Maximum Ratings
Approx Net Weight:
5.55g
Rating
Symbol
V
RRM
KSQ60A06B
60
50 Hz half Sine Wave
Resistive Load
94.2
50Hz Half Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
Repetitive Peak Reverse Voltage
Average Rectified Output Current *1
I
O
60
Tc=87
°
C
A
RMS Forward Current
I
F(RMS)
A
Surge Forward Current
I
FSM
700
A
Operating J unctionTemperature Range
Storage Temperature Range
Mounting torque
*1:Anode Terminals 1 and 3 Connected
Electrical
Thermal Characteristics
T
jw
T
stg
Ftor
°
C
°
C
Nm
Characteristics
Symbol
I
RM
V
FM
Rth(j-c) J unction to Case
Conditions
Min. Typ. Max. Unit
-
-
-
-
-
-
Peak Reverse Current
Peak Forward Voltage *1
Thermal Resistance J unction to Case
*1:Anode Terminals 1 and 3 Connected
Tj= 25
°
C, V
RM
= V
RRM
Tj= 25
°
C, I
FM
= 60 A
40
0.71
0.75
mA
V
°
C
/W
FE ATURE S
* Similar to TO-247AC(TO-3P)Case
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Current Capability
* 30 Volts thru 60 Volts Types Available
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KSQ60A06E | Schottky Barrier Diode |
| KSR1006 | NPN (SWITCHING APPLICATION) |
| KSR1007 | NPN SWITCHING APPLICATION) |
| KSR1007 | Switching Application |
| KSR1008 | NPN EPITAXIAL SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSQ60A06E | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
| KSQG601BP | 制造商:Kingstate Electronics Corporation 功能描述: |
| KSQG601P | 制造商:Kingstate Electronics Corporation 功能描述: |
| KSQG703BP | 制造商:Kingstate Electronics Corporation 功能描述: |
| KSQG706BP | 制造商:Kingstate Electronics Corporation 功能描述: |
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