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參數(shù)資料
| 型號(hào)： | KSE13003 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Switch Mode Applications |
| 中文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 48K |
| 代理商： | KSE13003 |
2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
K
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CEO
Collector-Emitter Breakdown Voltage
I
EBO
Emitter Cut-off Current
h
FE
*DC Current Gain
* Pulse Test: Pulse Width=5ms, Duty Cycle
≤
10%
Parameter
Value
700
400
9
1.5
3
0.75
20
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 5mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
=1A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
=125V, I
C
= 1A
I
B1
= 0.2A, I
B2
= - 0.2A
R
L
= 125
Min.
400
Typ.
Max.
Units
V
μ
A
10
40
8
5
V
CE
(sat)
*Collector Emitter Saturation Voltage
0.5
1
3
1
1.2
V
V
V
V
V
pF
MHz
μ
s
μ
s
μ
s
V
BE
(sat)
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
C
ob
f
T
t
ON
t
STG
t
F
21
4
1.1
4.0
0.7
KSE13003
High Voltage Switch Mode Applications
High Speed Switching
Suitable for Switching Regulator and Motor Control
1
1. Emitter 2.Collector 3.Base
TO-126
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSE13003_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor |
| KSE13003AS | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE13003-AS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| KSE13003ASTU | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE13003H1AS | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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