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參數(shù)資料
| 型號(hào)： | KS7308 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Frequency Conversion Memory(頻率轉(zhuǎn)換存儲(chǔ)器) |
| 中文描述： | 變頻內(nèi)存（頻率轉(zhuǎn)換存儲(chǔ)器） |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 64K |
| 代理商： | KS7308 |
KS7308 FCM
3. MICOM DATA WRITE
(1) First data (SMOD) will entr to S/P buffer from SI for Command decoding. To specify write mode, W - bit has to be set
“1” then. FCM is configurated to accept write access from MICOM.
(2) 4 Address data and HD control data will be written to Serial buffer.
(3) Last data (Stop Byte ) in S/P will be checked such as Stop code and even parity.
(4) Data in serial buffer will be transferd to internal register at VD rising edge.
[Timing diagram ]
4. MICOM Data Read
(1) First data (SMOD) will enter to S/P buffer from SI for Command decoding.
To specify read mode, R - bit has to be set “1” then. FCM is configured to accept
read operation by driving SO.
(2) 4 counter values (Read Address counter ; 2 Byte, Writer Address counter ; 2 Byte,)
and HD counter value are read out to SO pin.
[Timing diagram ]
8 clocks
8 clocks
40 clocks
5 Byte data
stop
0000W
SCSN
SCK
SI
SO
8 clocks
40 clocks
SCSN
SCK
SI
SO
Floating area
refer to Electrical spec
0000R
Floating area
Floating area
Floating area
5Byte data
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