參數(shù)資料
型號: KM68V512A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM)
中文描述: 64Kx8位低功耗和低電壓的CMOS靜態(tài)RAM(64K的x8位高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 2/10頁
文件大?。?/td> 180K
代理商: KM68V512A
KM68V512A, KM68U512A Family
CMOS SRAM
Revision 3.0
February 1998
2
64Kx8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
Process Technology : Poly Load
Organization : 64Kx8
Power Supply Voltage
KM68V512A family : 2.7~3.3V
KM68U512A family : 3.0~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-SOP-525, 32-TSOP1-0820F,
32-TSOP1-0813.4F
GENERAL DESCRIPTION
The KM68V512A and KM68U512A families are fabricated
by SAMSUNG
s advanced CMOS process technology. The
families support various operating temperature ranges and
have various package types for user flexibility of system
design. The family also support low data retention voltage for
battery back-up operation with low data retention current.
PIN DESCRIPTION
Name Name
CS
1
,CS
2
OE
WE
A
0
~A
15
I/O
1
~I/O
8
Vcc
Vss
N.C
Function
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Power
Ground
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating
Temperature
V
CC
Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(Isb
1
, Max)
10
μ
A
10
μ
A
20
μ
A
15
μ
A
20
μ
A
15
μ
A
Operating
(Icc
2
, Max)
KM68V512AL-L
Commercial(0~70
°
C)
3.0 ~ 3.6V
70
1)
/85/100
40mA
32-SOP
32-TSOP1-F
32-sTSOP1-F
KM68U512AL-L
2.7 ~ 3.3V
85
1)
/100
KM68V512ALE-L
Extended(-25~85
°
C)
3.0 ~ 3.6V
70
1)
/85/100
KM68U512ALE-L
2.7 ~ 3.3V
85
1)
/100
KM68V512ALI-L
Industrial (-40~85
°
C)
3.0 ~ 3.6V
70
1)
/85/100
KM68U512ALI-L
2.7 ~ 3.3V
85
1)
/100
FUNCTIONAL BLOCK DIAGRAM
32-TSOP
Type1 - Forward
(8mm x 20mm)
(8mm x 13.4mm)
32-SOP
N.C
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
CS2
A11
A9
A8
A13
A15
N.C
N.C
A7
A6
A5
A4
OE
CS1
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE
I/O8
A0
A1
A2
A3
A11
A9
A8
A13
A15
N.C
N.C
A7
A6
A5
A4
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
512 rows
128
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A3
A9
A11
A10
A4
A5
A6
A7
A8
A12
A14
CS1
CS2
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A13
A15
32-sTSOP
Type1 - Forward
Control
logic
相關PDF資料
PDF描述
KM68U512B 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM)
KM68V512B 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM)
KM68V1000B 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68V1002A 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
KM68V1002AI 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
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