參數(shù)資料
型號: KM44C1005D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOS四 CAS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
中文描述: 100萬x 4位的CMOS DRAM與四中科院擴展數(shù)據(jù)輸出(3米× 4位的CMOS四中科院動態(tài)隨機存儲器(帶擴展數(shù)據(jù)輸出))
文件頁數(shù): 7/21頁
文件大?。?/td> 393K
代理商: KM44C1005D
KM44C1005D
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
89
109
129
ns
Read-modify-write cycle time
t
RWC
121
145
170
ns
Access time from RAS
t
RAC
55
65
75
ns
3,4,10,12
Access time from CAS
t
CAC
18
20
25
ns
3,4,5,12
Access time from column address
t
AA
30
35
40
ns
3,10,12
RAS pulse width
t
RAS
55
10K
65
10K
75
10K
ns
CAS pulse width
t
CAS
13
10K
15
10K
20
10K
ns
RAS hold time
t
RSH
18
20
25
ns
CAS hold time
t
CSH
45
55
65
ns
Column Address to RAS lead time
t
RAL
30
35
40
ns
CAS to W delay time
t
CWD
35
39
49
ns
7
RAS to W delay time
t
RWD
72
84
94
ns
7
Column Address to W delay time
t
AWD
47
54
64
ns
7
Hyper Page mode cycle time
t
HPC
25
30
35
ns
Hyper Page mode read-modify-write cycle
t
HPRWC
52
61
76
ns
RAS pulse width (Fast Page cycle)
t
RASP
55
200K
65
200K
75
200K
ns
Access time from CAS precharge
t
CPA
33
40
45
ns
3
OE access time
t
OEA
18
20
25
ns
OE to data delay
t
OED
18
20
25
ns
OE command hold time
t
OEH
18
20
25
ns
( Note 11 )
相關(guān)PDF資料
PDF描述
KM44C16100B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
KM44C16104B 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
KM44C16004B 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
KM44C256A 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
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