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參數(shù)資料
| 型號(hào)： | KM44C1005D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOS四 CAS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 100萬(wàn)x 4位的CMOS DRAM與四中科院擴(kuò)展數(shù)據(jù)輸出（3米× 4位的CMOS四中科院動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁(yè)數(shù)： | 3/21頁(yè) |
| 文件大?。?/td> | 393K |
| 代理商： | KM44C1005D |
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KM44C1005D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-1 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-1 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V at pulse width
≤
20ns, Pulse width is measured at V
CC
*2 : -
2.0V at pulse width
≤
20ns, Pulse width is measured at V
SS
Parameter
Symbol
Rating
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
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