參數(shù)資料
型號: KM432S2020B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 32Bit x 2 Banks Synchronous DRAM(1M x 32位 x 2 組同步動態(tài)RAM)
中文描述: 100萬x 32Bit的× 2銀行同步DRAM(100萬× 32位× 2組同步動態(tài)RAM)的
文件頁數(shù): 9/9頁
文件大?。?/td> 68K
代理商: KM432S2020B
KM432S2020B
CMOS SDRAM
REV. 3 July 1998
Preliminary
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
t care, H=Logic high, L=Logic low)
1. OP Code : Operand code
A
0
~ A
11
, BA : Program keys. (@MRS)
2. MRS can be issued only at both banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at both banks precharge state.
4. BA : Bank select address.
If "Low" at read, write, row active and precharge, bank A is selected.
If "High" at read, write, row active and precharge, bank B is selected.
If A
10
/AP is "High" at row precharge, BA is ignored and both banks are selected.
5. During burst read or write with auto precharge, new read/write command for another bank can be issued.
New row active of the associated bank can be issued at t
RP
after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
BA
A
10
/AP
A
11,
A
9
~ A
0
Note
Register
Mode register set
H
X
L
L
L
L
X
OP code
1,2
Refresh
Auto refresh
H
H
L
L
L
H
X
X
3
Self
refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank active & row addr.
H
X
L
L
H
H
X
V
Row address
Read &
column address
Auto precharge disable
H
X
L
H
L
H
X
V
L
Column
address
(A
0
~ A
7
)
4
Auto precharge enable
H
4,5
Write &
column address
Auto precharge disable
H
X
L
H
L
L
X
V
L
Column
address
(A
0
~ A
7
)
4
Auto precharge enable
H
4,5
Burst stop
H
X
L
H
H
L
X
X
6
Precharge
Bank selection
H
X
L
L
H
L
X
V
L
X
Both banks
X
H
Clock Suspend or
active power down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge power down mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
V
X
7
No operation command
H
X
H
X
X
X
X
X
L
H
H
H
Notes :
X
相關(guān)PDF資料
PDF描述
KM432S2030C 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F6 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F7 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F8 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-G10 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM432S2030C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
KM432S2030CT-F8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL