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參數(shù)資料
| 型號(hào)： | KM432S2020B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 32Bit x 2 Banks Synchronous DRAM(1M x 32位 x 2 組同步動(dòng)態(tài)RAM) |
| 中文描述： | 100萬(wàn)x 32Bit的× 2銀行同步DRAM（100萬(wàn)× 32位× 2組同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | KM432S2020B |
KM432S2020B
CMOS SDRAM
REV. 3 July 1998
Preliminary
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
-8
-L
-10
-12
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
8
1000
10
1000
10
1000
12
1000
ns
1
CAS latency=2
12
12
13
15
CAS latency=1
24
24
26
30
CLK to valid
output delay
CAS latency=3
t
SAC
6
6
7
8
ns
1,2
CAS latency=2
6
7
8
9
CAS latency=1
20
20
22
24
Output data
hold time
CAS latency=3
t
OH
3
3
3
3
ns
2
CAS latency=2
3
3
3
3
CAS latency=1
5
5
5
5
CLK high pulse width
t
CH
3
3
3.5
3.5
ns
3
CLK low pulse width
t
CL
3
3
3.5
3.5
ns
3
Input setup time
t
SS
2
2
2.5
3
ns
3
Input hold time
t
SH
1
1
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
6
6
7
8
ns
CAS latency=2
6
7
8
9
CAS latency=1
20
20
22
24
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
4. This parameter is guaranteed by design not by test.
Notes :
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| KM432S2030C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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