- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373156 > KM41V16000C (SAMSUNG SEMICONDUCTOR CO. LTD.) 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) PDF資料下載
參數(shù)資料
| 型號： | KM41V16000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 1,600 x1Bit的CMOS動態(tài)隨機存儲器的快速頁面模式（1,600 x1位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 5/19頁 |
| 文件大?。?/td> | 293K |
| 代理商： | KM41V16000C |
CMOS DRAM
KM41C16000C, KM41V16000C
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [D]
C
IN1
-
7
pF
Input capacitance [A0 ~ A11]
C
IN2
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN3
-
7
pF
Output capacitance [Q]
C
OUT
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
t
RC
90
110
ns
Read-modify-write cycle time
t
RWC
t
RAC
110
130
ns
Access time from RAS
50
60
ns
3,4,10
Access time from CAS
t
CAC
t
AA
13
15
ns
3,5
Access time from column address
25
30
ns
3,10
CAS to output in Low-Z
t
CLZ
t
OFF
0
0
ns
3
Output buffer turn-off delay
0
13
0
15
ns
6
Transition time (rise and fall)
t
T
t
RP
3
50
3
50
ns
2
RAS precharge time
30
40
ns
RAS pulse width
t
RAS
t
RSH
50
10K
60
10K
ns
RAS hold time
13
15
ns
CAS hold time
t
CSH
t
CAS
50
60
ns
CAS pulse width
13
10K
15
10K
ns
RAS to CAS delay time
t
RCD
t
RAD
20
37
20
45
ns
4
RAS to column address delay time
15
25
15
30
ns
10
CAS to RAS precharge time
t
CRP
t
ASR
5
5
ns
Row address set-up time
0
0
ns
Row address hold time
t
RAH
t
ASC
10
10
ns
Column address set-up time
0
0
ns
Column address hold time
t
CAH
t
RAL
10
10
ns
Column address to RAS lead time
25
30
ns
Read command set-up time
t
RCS
t
RCH
0
0
ns
Read command hold time referenced to CAS
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
t
WCH
0
0
ns
8
Write command hold time
10
10
ns
Write command pulse width
t
WP
t
RWL
10
10
ns
Write command to RAS lead time
13
15
ns
Write command to CAS lead time
t
CWL
13
15
ns
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM41C4000D | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| KM4200IC8 | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| KM4200IC8TR3 | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| KM4200 | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| KM4200IM8 | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM41V4000D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 1Bit CMOS Dynamic RAM with Fast Page Mode |
| KM4200 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| KM4200IC8 | 功能描述:高速運算放大器 SOIC-8 RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| KM4200IC8TR3 | 功能描述:運算放大器 - 運放 Dual RRO amplifier 26Mhz RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| KM4200IC8TR3_NL | 功能描述:高速運算放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。