參數(shù)資料
型號： KM416V4104B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4M x 16bit CMOS Dynamic RAM with Extended Data Out
中文描述： 4米× 16位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出
文件頁數(shù)： 4/36頁
文件大?。?/td> 806K
代理商： KM416V4104B
KM416V4004B,
KM416V4104B
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=V
IH
, Address=Don
′
t care, DQ=Open, T
RC
=31.25us
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V4004B
KM416V4104B
I
CC1
Don
′
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
L
Don
′
t care
2
2
2
2
mA
mA
I
CC3
Don
′
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don
′
t care
-45
-5
-6
110
100
90
120
110
100
mA
mA
mA
I
CC5
Normal
L
Don
′
t care
500
300
500
300
uA
uA
I
CC6
Don
′
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC7
L
Don
′
t care
400
400
uA
I
CCS
L
Don
′
t care
400
400
uA
相關(guān)PDF資料
PDF描述
KM416V4104C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4104CS-45 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM41C16000C 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式))
KM41V16000C 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式))
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416V4104C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4104CS-45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM4170 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
KM4170IS5TR3 功能描述:高速運算放大器 Tiny RRIO Amplifier RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
KM4170IT5TR3 功能描述:運算放大器 - 運放 Tiny RRIO Amplifier RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel
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