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參數(shù)資料
| 型號： | KM416V4000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 4米× 16位的快速頁面模式的CMOS動態(tài)RAM（4米× 16位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 4/35頁 |
| 文件大?。?/td> | 697K |
| 代理商： | KM416V4000C |
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KM416V4000C,
KM416V4100C
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V,
W, OE=V
IH
, Address=Don
′
t care, DQ=Open, T
RC
=31.25us
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V4000C
KM416V4100C
I
CC1
Don
′
t care
-45
-5
-6
90
80
70
130
120
110
mA
mA
mA
I
CC2
Normal
L
Don
′
t care
1
1
1
1
mA
mA
I
CC3
Don
′
t care
-45
-5
-6
90
80
70
130
120
110
mA
mA
mA
I
CC4
Don
′
t care
-45
-5
-6
70
60
50
70
60
50
mA
mA
mA
I
CC5
Normal
L
Don
′
t care
500
200
500
200
uA
uA
I
CC6
Don
′
t care
-45
-5
-6
130
120
110
130
120
110
mA
mA
mA
I
CC7
L
Don
′
t care
Don
′
t care
350
350
uA
I
CCS
350
350
uA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V4104B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4104CS-45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM41C16000C | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| KM41V16000C | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V4004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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